Abstract
AbstractRecent progress in research on InGaAlN and II–VI systems has been remarkable, and this paper reviews the properties of these materials from the viewpoint of making reliable light‐emitting devices. The growth of these materials by molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE) is also reviewed, and the current status of both materials is reviewed with respect to light‐emitting devices.
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Dates
Type | When |
---|---|
Created | 20 years, 3 months ago (May 27, 2005, 9:23 p.m.) |
Deposited | 1 year, 10 months ago (Oct. 31, 2023, 4:43 p.m.) |
Indexed | 5 months, 2 weeks ago (March 19, 2025, 8:19 a.m.) |
Issued | 29 years, 3 months ago (June 1, 1996) |
Published | 29 years, 3 months ago (June 1, 1996) |
Published Online | 20 years, 10 months ago (Oct. 29, 2004) |
Published Print | 29 years, 3 months ago (June 1, 1996) |
@article{Matsuoka_1996, title={InGaAlN and II–VI Systems for Blue–Green Light‐Emitting Devices}, volume={8}, ISSN={1521-4095}, url={http://dx.doi.org/10.1002/adma.19960080603}, DOI={10.1002/adma.19960080603}, number={6}, journal={Advanced Materials}, publisher={Wiley}, author={Matsuoka, Takashi}, year={1996}, month=jun, pages={469–479} }