Abstract
Magnetism in III–V semiconductors is a comparatively new area of study: the first III–V based diluted magnetic semiconductors were produced in epitaxial films of (In, Mn)As grown on GaAs(100) substrates in 1989. An account is given of the magnetic behavior of these novel semi‐magnetic alloys at various carrier concentrations. Finally, magneto‐optical devices are presented in which the control of the carrier concentration by an electric field results in the manipulation of magnetic properties.
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Dates
Type | When |
---|---|
Created | 20 years, 7 months ago (Dec. 29, 2004, 1:06 a.m.) |
Deposited | 1 year, 9 months ago (Nov. 20, 2023, 7:19 p.m.) |
Indexed | 1 year, 6 months ago (Feb. 3, 2024, 3:07 p.m.) |
Issued | 30 years, 7 months ago (Jan. 1, 1995) |
Published | 30 years, 7 months ago (Jan. 1, 1995) |
Published Online | 20 years, 11 months ago (Sept. 15, 2004) |
Published Print | 30 years, 7 months ago (Jan. 1, 1995) |
@article{Munekata_1995, title={III–V based diluted magnetic semi conductors: Carrier–induced magnetism}, volume={7}, ISSN={1521-4095}, url={http://dx.doi.org/10.1002/adma.19950070119}, DOI={10.1002/adma.19950070119}, number={1}, journal={Advanced Materials}, publisher={Wiley}, author={Munekata, Hiro}, year={1995}, month=jan, pages={82–85} }