Crossref journal-article
Wiley
Advanced Materials (311)
Abstract

Open framework semiconductors tin(IV) sulfides and tin(IV) selenides) exhibiting bulk crystalline nanoporosity have been studied using atomic force microscopy (AFM). The bulk porosity is reflected in the surface structures of these materials (see Fig.), and little reconstruction can be detected, important points in the assessment of the electrical transport characteristics of this new class of nanoporous materials. magnified image

Bibliography

Enzel, P., Henderson, G. S., Ozin, G. A., & Bedard, R. L. (1995). Imaging the surfaces of nanoporous semiconductors by atomic force microscopy. Advanced Materials, 7(1), 64–68. Portico.

Authors 4
  1. Patricia Enzel (first)
  2. Grant S. Henderson (additional)
  3. Geoffrey A. Ozin (additional)
  4. Robert L. Bedard (additional)
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Dates
Type When
Created 20 years, 7 months ago (Dec. 29, 2004, 1:06 a.m.)
Deposited 1 year, 9 months ago (Nov. 20, 2023, 7:20 p.m.)
Indexed 1 year, 1 month ago (July 19, 2024, 1:07 p.m.)
Issued 30 years, 7 months ago (Jan. 1, 1995)
Published 30 years, 7 months ago (Jan. 1, 1995)
Published Online 20 years, 11 months ago (Sept. 15, 2004)
Published Print 30 years, 7 months ago (Jan. 1, 1995)
Funders 0

None

@article{Enzel_1995, title={Imaging the surfaces of nanoporous semiconductors by atomic force microscopy}, volume={7}, ISSN={1521-4095}, url={http://dx.doi.org/10.1002/adma.19950070115}, DOI={10.1002/adma.19950070115}, number={1}, journal={Advanced Materials}, publisher={Wiley}, author={Enzel, Patricia and Henderson, Grant S. and Ozin, Geoffrey A. and Bedard, Robert L.}, year={1995}, month=jan, pages={64–68} }