DOI: 10.1002/adfm.201808606. Nonvolatile Ferroelectric Memory Effect in Ultrathin α‐In<sub>2</sub>Se<sub>3</sub>

Nonvolatile Ferroelectric Memory Effect in Ultrathin α‐In2Se3

10.1002/adfm.201808606

Crossref journal-article

Wiley

Advanced Functional Materials (311)

Abstract

AbstractHigh‐density memory is integral in solid‐state electronics. 2D ferroelectrics offer a new platform for developing ultrathin electronic devices with nonvolatile functionality. Recent experiments on layered α‐In2Se3 confirm its room‐temperature out‐of‐plane ferroelectricity under ambient conditions. Here, a nonvolatile memory effect in a hybrid 2D ferroelectric field‐effect transistor (FeFET) made of ultrathin α‐In2Se3 and graphene is demonstrated. The resistance of the graphene channel in the FeFET is effectively controllable and retentive due to the electrostatic doping, which stems from the electric polarization of the ferroelectric α‐In2Se3. The electronic logic bit can be represented and stored with different orientations of electric dipoles in the top‐gate ferroelectric. The 2D FeFET can be randomly rewritten over more than 105 cycles without losing the nonvolatility. The approach demonstrates a prototype of rewritable nonvolatile memory with ferroelectricity in van der Waals 2D materials.

Bibliography

Wan, S., Li, Y., Li, W., Mao, X., Wang, C., Chen, C., Dong, J., Nie, A., Xiang, J., Liu, Z., Zhu, W., & Zeng, H. (2019). Nonvolatile Ferroelectric Memory Effect in Ultrathin Î±âIn2Se3. Advanced Functional Materials, 29(20). Portico.

Authors 12

Siyuan Wan (first)
Yue Li (additional)
Wei Li (additional)
Xiaoyu Mao (additional)
Chen Wang (additional)
Chen Chen (additional)
Jiyu Dong (additional)
Anmin Nie (additional)
Jianyong Xiang (additional)
Zhongyuan Liu (additional)
Wenguang Zhu (additional)
Hualing Zeng (additional)

References 56 Referenced 195

Dates

Type	When
Created	6 years, 5 months ago (Feb. 26, 2019, 1:50 a.m.)
Deposited	1 year, 11 months ago (Sept. 10, 2023, 12:32 p.m.)
Indexed	1 week, 1 day ago (Aug. 12, 2025, 6:20 p.m.)
Issued	6 years, 5 months ago (Feb. 25, 2019)
Published	6 years, 5 months ago (Feb. 25, 2019)
Published Online	6 years, 5 months ago (Feb. 25, 2019)
Published Print	6 years, 3 months ago (May 1, 2019)

Funders 2

National Natural Science Foundation of China 10.13039/501100001809
Region: Asia
gov (National government)
Labels11
1. Chinese National Science Foundation
2. Natural Science Foundation of China
3. National Science Foundation of China
4. NNSF of China
5. NSF of China
6. 国家自然科学基金委员会
7. National Nature Science Foundation of China
8. Guójiā Zìrán Kēxué Jījīn Wěiyuánhuì
9. NSFC
10. NNSF
11. NNSFC
Awards5
1. 11634011
2. 11674299
3. 51732010
4. 11674295
5. 11374273
Chinese Academy of Sciences 10.13039/501100002367
Region: Asia
gov (Universities (academic only))
Labels3
1. 中国科学院
2. Academia Sinica
3. CAS
Awards1
1. XDB30000000

BibTeX

@article{Wan_2019, title={Nonvolatile Ferroelectric Memory Effect in Ultrathin α‐In2Se3}, volume={29}, ISSN={1616-3028}, url={http://dx.doi.org/10.1002/adfm.201808606}, DOI={10.1002/adfm.201808606}, number={20}, journal={Advanced Functional Materials}, publisher={Wiley}, author={Wan, Siyuan and Li, Yue and Li, Wei and Mao, Xiaoyu and Wang, Chen and Chen, Chen and Dong, Jiyu and Nie, Anmin and Xiang, Jianyong and Liu, Zhongyuan and Zhu, Wenguang and Zeng, Hualing}, year={2019}, month=feb }

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    }
  },
  "alternative-id": [
    "10.1002/adfm.201808606"
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  "URL": "http://dx.doi.org/10.1002/adfm.201808606",
  "relation": {},
  "ISSN": [
    "1616-301X",
    "1616-3028"
  ],
  "subject": [],
  "container-title-short": "Adv Funct Materials",
  "published": {
    "date-parts": [
      [
        2019,
        2,
        25
      ]
    ]
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  "assertion": [
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  "article-number": "1808606"
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