DOI: 10.1002/adfm.201804235. Dielectric Dispersion and High Field Response of Multilayer Hexagonal Boron Nitride

Dielectric Dispersion and High Field Response of Multilayer Hexagonal Boron Nitride

10.1002/adfm.201804235

Crossref journal-article

Wiley

Advanced Functional Materials (311)

Abstract

AbstractThe dielectric dispersion of a material holds significant importance for the understanding of basic material characteristics and the design parameters of a functional device. Here, the dielectric dispersion characteristics of multilayer hexagonal boron nitride (hBN) using time domain reflectometry under an extended device operating frequency range up to 100 MHz are studied. Contrary to what is previously reported, the capacitance, hence the effective dielectric constant, of hBN decreases with the increase of frequency above the MHz range, indicating heat dissipation in lossy hBN dielectric. Furthermore, hBN shows stubborn dielectric characteristics with temperature changes that confirm its thermal stability in extreme operating conditions. The charge carriers in hBN are transported by Fowler–Nordhiem tunneling with increasing the electrical field. Lastly, hBN endures electrical field of 7.8 MV cm−1 that implies its potential use as a promising dielectric material. These results will benefit the research and development of hBN supported high‐speed electronics operated at high‐frequency conditions for energy‐efficient device applications.

Bibliography

Ahmed, F., Heo, S., Yang, Z., Ali, F., Ra, C. H., Lee, H., Taniguchi, T., Hone, J., Lee, B. H., & Yoo, W. J. (2018). Dielectric Dispersion and High Field Response of Multilayer Hexagonal Boron Nitride. Advanced Functional Materials, 28(40). Portico.

Authors 10

Faisal Ahmed (first)
Sunwoo Heo (additional)
Zheng Yang (additional)
Fida Ali (additional)
Chang Ho Ra (additional)
Ho‐In Lee (additional)
Takashi Taniguchi (additional)
James Hone (additional)
Byoung Hun Lee (additional)
Won Jong Yoo (additional)

References 41 Referenced 48

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{'key': 'e_1_2_4_29_1', 'first-page': '2139', 'volume': '12', 'author': 'Altindal Ş.', 'year': '2010', 'journal-title': 'J. Optoelectron. Adv. Mater.'} / J. Optoelectron. Adv. Mater. by Altindal Ş. (2010)
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Dates

Type	When
Created	7 years ago (Aug. 10, 2018, 6:04 a.m.)
Deposited	1 year, 11 months ago (Sept. 16, 2023, 10:41 p.m.)
Indexed	3 days, 9 hours ago (Aug. 20, 2025, 8:34 a.m.)
Issued	7 years ago (Aug. 10, 2018)
Published	7 years ago (Aug. 10, 2018)
Published Online	7 years ago (Aug. 10, 2018)
Published Print	6 years, 10 months ago (Oct. 1, 2018)

Funders 2

Ministry of Science, ICT and Future Planning 10.13039/501100003621
Region: Asia
gov (National government)
Labels1
1. MSIP
National Research Foundation of Korea 10.13039/501100003725
Region: Asia
pri (Trusts, charities, foundations (both public and private))
Labels3
1. 한국연구재단이 창의적 연구와
2. National Research Foundation (South Korea)
3. NRF

BibTeX

@article{Ahmed_2018, title={Dielectric Dispersion and High Field Response of Multilayer Hexagonal Boron Nitride}, volume={28}, ISSN={1616-3028}, url={http://dx.doi.org/10.1002/adfm.201804235}, DOI={10.1002/adfm.201804235}, number={40}, journal={Advanced Functional Materials}, publisher={Wiley}, author={Ahmed, Faisal and Heo, Sunwoo and Yang, Zheng and Ali, Fida and Ra, Chang Ho and Lee, Ho‐In and Taniguchi, Takashi and Hone, James and Lee, Byoung Hun and Yoo, Won Jong}, year={2018}, month=aug }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        20
      ]
    ],
    "date-time": "2025-08-20T12:34:52Z",
    "timestamp": 1755693292374,
    "version": "3.41.2"
  },
  "reference-count": 41,
  "publisher": "Wiley",
  "issue": "40",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            2018,
            8,
            10
          ]
        ],
        "date-time": "2018-08-10T00:00:00Z",
        "timestamp": 1533859200000
      },
      "content-version": "vor",
      "delay-in-days": 0,
      "URL": "http://onlinelibrary.wiley.com/termsAndConditions#vor"
    }
  ],
  "funder": [
    {
      "DOI": "10.13039/501100003621",
      "name": "Ministry of Science, ICT and Future Planning",
      "doi-asserted-by": "publisher",
      "id": [
        {
          "id": "10.13039/501100003621",
          "id-type": "DOI",
          "asserted-by": "publisher"
        }
      ]
    },
    {
      "DOI": "10.13039/501100003725",
      "name": "National Research Foundation of Korea",
      "doi-asserted-by": "publisher",
      "id": [
        {
          "id": "10.13039/501100003725",
          "id-type": "DOI",
          "asserted-by": "publisher"
        }
      ]
    }
  ],
  "content-domain": {
    "domain": [
      "onlinelibrary.wiley.com"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2018,
        10
      ]
    ]
  },
  "abstract": "<jats:title>Abstract</jats:title><jats:p>The dielectric dispersion of a material holds significant importance for the understanding of basic material characteristics and the design parameters of a functional device. Here, the dielectric dispersion characteristics of multilayer hexagonal boron nitride (hBN) using time domain reflectometry under an extended device operating frequency range up to 100 MHz are studied. Contrary to what is previously reported, the capacitance, hence the effective dielectric constant, of hBN decreases with the increase of frequency above the MHz range, indicating heat dissipation in lossy hBN dielectric. Furthermore, hBN shows stubborn dielectric characteristics with temperature changes that confirm its thermal stability in extreme operating conditions. The charge carriers in hBN are transported by Fowler\u2013Nordhiem tunneling with increasing the electrical field. Lastly, hBN endures electrical field of 7.8 MV cm<jats:sup>\u22121</jats:sup> that implies its potential use as a promising dielectric material. These results will benefit the research and development of hBN supported high\u2010speed electronics operated at high\u2010frequency conditions for energy\u2010efficient device applications.</jats:p>",
  "DOI": "10.1002/adfm.201804235",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2018,
        8,
        10
      ]
    ],
    "date-time": "2018-08-10T10:04:59Z",
    "timestamp": 1533895499000
  },
  "update-policy": "https://doi.org/10.1002/crossmark_policy",
  "source": "Crossref",
  "is-referenced-by-count": 48,
  "title": "Dielectric Dispersion and High Field Response of Multilayer Hexagonal Boron Nitride",
  "prefix": "10.1002",
  "volume": "28",
  "author": [
    {
      "given": "Faisal",
      "family": "Ahmed",
      "sequence": "first",
      "affiliation": [
        {
          "name": "School of Mechanical Engineering Sungkyunkwan University  2066 Seobu\u2010ro, Jangan\u2010gu Suwon Gyeonggi\u2010do 16419 South Korea"
        },
        {
          "name": "Department of Nano Science and Technology SKKU Advanced Institute of Nano\u2010Technology (SAINT) Sungkyunkwan University  2066 Seobu\u2010ro, Jangan\u2010gu Suwon Gyeonggi\u2010do 16419 South Korea"
        }
      ]
    },
    {
      "given": "Sunwoo",
      "family": "Heo",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Center for Emerging Electronic Devices and Systems School of Materials Sciences and Engineering Gwangju Institute of Science and Technology  Gwangju 61005 South Korea"
        }
      ]
    },
    {
      "given": "Zheng",
      "family": "Yang",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Nano Science and Technology SKKU Advanced Institute of Nano\u2010Technology (SAINT) Sungkyunkwan University  2066 Seobu\u2010ro, Jangan\u2010gu Suwon Gyeonggi\u2010do 16419 South Korea"
        }
      ]
    },
    {
      "given": "Fida",
      "family": "Ali",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Nano Science and Technology SKKU Advanced Institute of Nano\u2010Technology (SAINT) Sungkyunkwan University  2066 Seobu\u2010ro, Jangan\u2010gu Suwon Gyeonggi\u2010do 16419 South Korea"
        }
      ]
    },
    {
      "given": "Chang Ho",
      "family": "Ra",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Nano Science and Technology SKKU Advanced Institute of Nano\u2010Technology (SAINT) Sungkyunkwan University  2066 Seobu\u2010ro, Jangan\u2010gu Suwon Gyeonggi\u2010do 16419 South Korea"
        }
      ]
    },
    {
      "given": "Ho\u2010In",
      "family": "Lee",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Center for Emerging Electronic Devices and Systems School of Materials Sciences and Engineering Gwangju Institute of Science and Technology  Gwangju 61005 South Korea"
        }
      ]
    },
    {
      "given": "Takashi",
      "family": "Taniguchi",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "National Institute for Materials Science  1\u20101 Namiki Tsukuba 305\u20100044 Japan"
        }
      ]
    },
    {
      "given": "James",
      "family": "Hone",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Mechanical Engineering Columbia University  500 W. 120th St. New York NY 10027 USA"
        }
      ]
    },
    {
      "given": "Byoung Hun",
      "family": "Lee",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Center for Emerging Electronic Devices and Systems School of Materials Sciences and Engineering Gwangju Institute of Science and Technology  Gwangju 61005 South Korea"
        }
      ]
    },
    {
      "ORCID": "https://orcid.org/0000-0002-3767-7969",
      "authenticated-orcid": false,
      "given": "Won Jong",
      "family": "Yoo",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "School of Mechanical Engineering Sungkyunkwan University  2066 Seobu\u2010ro, Jangan\u2010gu Suwon Gyeonggi\u2010do 16419 South Korea"
        },
        {
          "name": "Department of Nano Science and Technology SKKU Advanced Institute of Nano\u2010Technology (SAINT) Sungkyunkwan University  2066 Seobu\u2010ro, Jangan\u2010gu Suwon Gyeonggi\u2010do 16419 South Korea"
        }
      ]
    }
  ],
  "member": "311",
  "published-online": {
    "date-parts": [
      [
        2018,
        8,
        10
      ]
    ]
  },
  "reference": [
    {
      "volume-title": "Dielectric Behavior and Structure: Dielectric Constant and Loss, Dipole Moment and Molecular Structure",
      "year": "1955",
      "author": "Smyth C. P.",
      "key": "e_1_2_4_1_1"
    },
    {
      "key": "e_1_2_4_2_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1186/1556-276X-8-456"
    },
    {
      "key": "e_1_2_4_3_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1039/C5NR01052G"
    },
    {
      "key": "e_1_2_4_4_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1007/s11664-001-0032-0"
    },
    {
      "key": "e_1_2_4_5_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1039/C7TC04300G"
    },
    {
      "key": "e_1_2_4_6_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/21526"
    },
    {
      "key": "e_1_2_4_7_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/nnano.2010.172"
    },
    {
      "key": "e_1_2_4_8_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/nl3002205"
    },
    {
      "key": "e_1_2_4_9_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.3662043"
    },
    {
      "key": "e_1_2_4_10_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/nmat1134"
    },
    {
      "key": "e_1_2_4_11_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1103/PhysRevB.30.6051"
    },
    {
      "key": "e_1_2_4_12_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1364/OME.4.000587"
    },
    {
      "key": "e_1_2_4_13_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1364/OE.20.023201"
    },
    {
      "key": "e_1_2_4_14_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/16.772500"
    },
    {
      "key": "e_1_2_4_15_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1126/science.aac9439"
    },
    {
      "key": "e_1_2_4_16_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/ncomms3681"
    },
    {
      "key": "e_1_2_4_17_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/nnano.2015.70"
    },
    {
      "key": "e_1_2_4_18_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/nnano.2015.91"
    },
    {
      "key": "e_1_2_4_19_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/ncomms7647"
    },
    {
      "key": "e_1_2_4_20_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/ncomms2652"
    },
    {
      "key": "e_1_2_4_21_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1002/adfm.201604025"
    },
    {
      "key": "e_1_2_4_22_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/nn301675f"
    },
    {
      "key": "e_1_2_4_23_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/ncomms9662"
    },
    {
      "key": "e_1_2_4_24_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/srep30449"
    },
    {
      "key": "e_1_2_4_25_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1002/smll.201001628"
    },
    {
      "key": "e_1_2_4_26_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/LED.2017.2671367"
    },
    {
      "key": "e_1_2_4_27_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/TED.2008.927659"
    },
    {
      "key": "e_1_2_4_28_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.1750906"
    },
    {
      "key": "e_1_2_4_29_1",
      "first-page": "2139",
      "volume": "12",
      "author": "Altindal \u015e.",
      "year": "2010",
      "journal-title": "J. Optoelectron. Adv. Mater."
    },
    {
      "key": "e_1_2_4_30_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/j.cap.2013.07.004"
    },
    {
      "key": "e_1_2_4_31_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/j.mee.2005.04.008"
    },
    {
      "key": "e_1_2_4_32_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1103/PhysRevB.80.155425"
    },
    {
      "key": "e_1_2_4_33_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/nl304060g"
    },
    {
      "key": "e_1_2_4_34_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/nn500059s"
    },
    {
      "key": "e_1_2_4_35_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1039/C5NR01044F"
    },
    {
      "key": "e_1_2_4_36_1",
      "first-page": "021021",
      "volume": "29",
      "author": "Mohammad S. N.",
      "year": "2011",
      "journal-title": "J. Vac. Sci. Technol., B: Nanotechnol. Microelectron.: Mater., Process., Meas., Phenom."
    },
    {
      "key": "e_1_2_4_37_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/16.981213"
    },
    {
      "key": "e_1_2_4_38_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/nn506645q"
    },
    {
      "key": "e_1_2_4_39_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/acsami.6b06425"
    },
    {
      "key": "e_1_2_4_40_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.4939131"
    },
    {
      "key": "e_1_2_4_41_1",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.3373571"
    }
  ],
  "container-title": "Advanced Functional Materials",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fadfm.201804235",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201804235",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        9,
        17
      ]
    ],
    "date-time": "2023-09-17T02:41:17Z",
    "timestamp": 1694918477000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://onlinelibrary.wiley.com/doi/10.1002/adfm.201804235"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2018,
        8,
        10
      ]
    ]
  },
  "references-count": 41,
  "journal-issue": {
    "issue": "40",
    "published-print": {
      "date-parts": [
        [
          2018,
          10
        ]
      ]
    }
  },
  "alternative-id": [
    "10.1002/adfm.201804235"
  ],
  "URL": "http://dx.doi.org/10.1002/adfm.201804235",
  "relation": {},
  "ISSN": [
    "1616-301X",
    "1616-3028"
  ],
  "subject": [],
  "container-title-short": "Adv Funct Materials",
  "published": {
    "date-parts": [
      [
        2018,
        8,
        10
      ]
    ]
  },
  "assertion": [
    {
      "value": "2018-06-20",
      "order": 0,
      "name": "received",
      "label": "Received",
      "group": {
        "name": "publication_history",
        "label": "Publication History"
      }
    },
    {
      "value": "2018-08-10",
      "order": 2,
      "name": "published",
      "label": "Published",
      "group": {
        "name": "publication_history",
        "label": "Publication History"
      }
    }
  ],
  "article-number": "1804235"
}