Crossref journal-article
Wiley
Advanced Functional Materials (311)
Abstract

Abstract2D ferroelectric material has emerged as an attractive building block for high‐density data storage nanodevices. Although monolayer van der Waals ferroelectrics have been theoretically predicted, a key experimental breakthrough for such calculations is still not realized. Here, hexagonally stacking α‐In2Se3 nanoflake, a rarely studied van der Waals polymorph, is reported to exhibit out‐of‐plane (OOP) and in‐plane (IP) ferroelectricity at room temperature. Ferroelectric multidomain states in a hexagonal α‐In2Se3 nanoflake with uniform thickness can survive to 6 nm. Most strikingly, the electric‐field‐induced polarization switching and hysteresis loop are, respectively, observed down to the bilayer and monolayer (≈1.2 nm) thicknesses, which designates it as the thinnest layered ferroelectric and verifies the corresponding theoretical calculation. In addition, two types of ferroelectric nanodevices employing the OOP and IP polarizations in 2H α‐In2Se3 are developed, which are applicable for nonvolatile memories and heterostructure‐based nanoelectronics/optoelectronics.

Bibliography

Xue, F., Hu, W., Lee, K., Lu, L., Zhang, J., Tang, H., Han, A., Hsu, W., Tu, S., Chang, W., Lien, C., He, J., Zhang, Z., Li, L., & Zhang, X. (2018). Room‐Temperature Ferroelectricity in Hexagonally Layered α‐In2Se3 Nanoflakes down to the Monolayer Limit. Advanced Functional Materials, 28(50). Portico.

Authors 15
  1. Fei Xue (first)
  2. Weijin Hu (additional)
  3. Ko‐Chun Lee (additional)
  4. Li‐Syuan Lu (additional)
  5. Junwei Zhang (additional)
  6. Hao‐Ling Tang (additional)
  7. Ali Han (additional)
  8. Wei‐Ting Hsu (additional)
  9. Shaobo Tu (additional)
  10. Wen‐Hao Chang (additional)
  11. Chen‐Hsin Lien (additional)
  12. Jr‐Hau He (additional)
  13. Zhidong Zhang (additional)
  14. Lain‐Jong Li (additional)
  15. Xixiang Zhang (additional)
Dates
Type When
Created 6 years, 9 months ago (Oct. 22, 2018, 2:01 a.m.)
Deposited 1 year, 11 months ago (Sept. 14, 2023, 10:44 p.m.)
Indexed 2 days, 3 hours ago (Aug. 19, 2025, 6 a.m.)
Issued 6 years, 10 months ago (Oct. 21, 2018)
Published 6 years, 10 months ago (Oct. 21, 2018)
Published Online 6 years, 10 months ago (Oct. 21, 2018)
Published Print 6 years, 8 months ago (Dec. 1, 2018)
Funders 4
  1. King Abdullah University of Science and Technology 10.13039/501100004052

    Region: Asia

    pri (Universities (academic only))

    Labels2
    1. جامعة الملك عبدالله للعلوم والتقنية
    2. KAUST
    Awards2
    1. CRF‐2015‐2634‐CRG4
    2. CRF‐2016‐2996‐CRG5
  2. Chinese Academy of Sciences 10.13039/501100002367

    Region: Asia

    gov (Universities (academic only))

    Labels3
    1. 中国科学院
    2. Academia Sinica
    3. CAS
  3. Ministry of Science and Technology, Taiwan 10.13039/501100004663

    Region: Asia

    gov (National government)

    Labels3
    1. Ministry of Science and Technology, R.O.C. (Taiwan)
    2. Ministry of Science and Technology of Taiwan
    3. MOST
    Awards2
    1. 107‐2112‐M‐009‐024‐MY3
    2. 105‐2119‐M‐009‐014‐MY3
  4. National Chiao Tung University 10.13039/501100005799

    Region: Asia

    gov (Universities (academic only))

    Labels1
    1. NCTU

@article{Xue_2018, title={Room‐Temperature Ferroelectricity in Hexagonally Layered α‐In2Se3 Nanoflakes down to the Monolayer Limit}, volume={28}, ISSN={1616-3028}, url={http://dx.doi.org/10.1002/adfm.201803738}, DOI={10.1002/adfm.201803738}, number={50}, journal={Advanced Functional Materials}, publisher={Wiley}, author={Xue, Fei and Hu, Weijin and Lee, Ko‐Chun and Lu, Li‐Syuan and Zhang, Junwei and Tang, Hao‐Ling and Han, Ali and Hsu, Wei‐Ting and Tu, Shaobo and Chang, Wen‐Hao and Lien, Chen‐Hsin and He, Jr‐Hau and Zhang, Zhidong and Li, Lain‐Jong and Zhang, Xixiang}, year={2018}, month=oct }