DOI: 10.1002/adfm.201707383. Elemental Ferroelectricity and Antiferroelectricity in Group‐V Monolayer

Elemental Ferroelectricity and Antiferroelectricity in Group‐V Monolayer

10.1002/adfm.201707383

Crossref journal-article

Wiley

Advanced Functional Materials (311)

Abstract

AbstractFerroelectricity is usually found in compound materials composed by different elements. Here, based on first‐principles calculations, spontaneous electric polarization and ferroelectricity in 2D elemental group‐V (As, Sb, and Bi) monolayer with the puckered lattice structure similar to phosphorene is revealed. These are the first example of elemental ferroelectric materials. The polarization is due to the spontaneous lattice distortion with atomic layer buckling and has quite sizable values, comparable or even larger than that recently found in 2D monolayer compound SnTe. Interestingly, for Bi monolayer, apart from the ferroelectric phase, it is found that it can also host an antiferroelectric phase. The Curie temperatures of these elemental materials can be higher than room temperature, making them promising for realizing ultrathin ferroelectric devices of broad interest. A general model is constructed to understand and search for 2D ferroelectric and antiferroelectric materials in future studies.

Bibliography

Xiao, C., Wang, F., Yang, S. A., Lu, Y., Feng, Y., & Zhang, S. (2018). Elemental Ferroelectricity and Antiferroelectricity in GroupâV Monolayer. Advanced Functional Materials, 28(17). Portico.

Authors 6

Chengcheng Xiao (first)
Fang Wang (additional)
Shengyuan A. Yang (additional)
Yunhao Lu (additional)
Yuanping Feng (additional)
Shengbai Zhang (additional)

References 39 Referenced 210

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Dates

Type	When
Created	7 years, 5 months ago (Feb. 23, 2018, 3:12 a.m.)
Deposited	1 year, 11 months ago (Sept. 10, 2023, 3:24 a.m.)
Indexed	47 minutes ago (Aug. 21, 2025, 6:38 a.m.)
Issued	7 years, 5 months ago (Feb. 23, 2018)
Published	7 years, 5 months ago (Feb. 23, 2018)
Published Online	7 years, 5 months ago (Feb. 23, 2018)
Published Print	7 years, 4 months ago (April 1, 2018)

Funders 1

National Natural Science Foundation of China 10.13039/501100001809
Region: Asia
gov (National government)
Labels11
1. Chinese National Science Foundation
2. Natural Science Foundation of China
3. National Science Foundation of China
4. NNSF of China
5. NSF of China
6. 国家自然科学基金委员会
7. National Nature Science Foundation of China
8. Guójiā Zìrán Kēxué Jījīn Wěiyuánhuì
9. NSFC
10. NNSF
11. NNSFC
Awards2
1. 61574123
2. 11374009

BibTeX

@article{Xiao_2018, title={Elemental Ferroelectricity and Antiferroelectricity in Group‐V Monolayer}, volume={28}, ISSN={1616-3028}, url={http://dx.doi.org/10.1002/adfm.201707383}, DOI={10.1002/adfm.201707383}, number={17}, journal={Advanced Functional Materials}, publisher={Wiley}, author={Xiao, Chengcheng and Wang, Fang and Yang, Shengyuan A. and Lu, Yunhao and Feng, Yuanping and Zhang, Shengbai}, year={2018}, month=feb }

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