DOI: 10.1002/adfm.201603884. Epitaxial Stitching and Stacking Growth of Atomically Thin Transition‐Metal Dichalcogenides (TMDCs) Heterojunctions

Epitaxial Stitching and Stacking Growth of Atomically Thin Transition‐Metal Dichalcogenides (TMDCs) Heterojunctions

10.1002/adfm.201603884

Crossref journal-article

Wiley

Advanced Functional Materials (311)

Abstract

In recent years, ultrathin two‐dimensional (2D) transition metal dichalcogenides (TMDCs), such as MX2 (M = Mo, W; X = S, Se, etc.) have become the flagship materials after graphene. 2D‐MX2 have attracted significant attention due to their novel properties arising from their strict dimensional confinement as well as strong spin–orbit coupling effects, which provides an ideal platform for exploring new fundamental research and realizing technological innovation. The 2D nature and the small lattice mismatch between MX2 make them ideal templates for construction of vertical and lateral heterojunctions at atomic scale by means of CVD epitaxial growth. This feature article aims to introduce current advances in the preparation of vertical or lateral epitaxial heterostructures based on 2D MX2 nanosheets as well as their potential applications in electronics, and optoelectronics. Firstly, various epitaxial CVD strategies for synthesis of vertical or lateral 2D MX2 heterostructures are comprehensively reviewed. Meanwhile, the advantages of these epitaxial methods as well as several applications of 2D MX2 heterostructures, such as photodiodes and photovoltaic devices are highlighted. Then the remaining challenges facing the controllable syntheses and the future perspectives of this promising area are discussed.

Bibliography

Chen, K., Wan, X., & Xu, J. (2017). Epitaxial Stitching and Stacking Growth of Atomically Thin TransitionâMetal Dichalcogenides (TMDCs) Heterojunctions. Advanced Functional Materials, 27(19). Portico.

Authors 3

Kun Chen (first)
Xi Wan (additional)
Jianbin Xu (additional)

References 165 Referenced 76

Dates

Type	When
Created	8 years, 7 months ago (Jan. 9, 2017, 9:01 a.m.)
Deposited	1 year, 11 months ago (Sept. 12, 2023, 7:58 a.m.)
Indexed	3 weeks, 5 days ago (July 30, 2025, 3:32 a.m.)
Issued	8 years, 7 months ago (Jan. 9, 2017)
Published	8 years, 7 months ago (Jan. 9, 2017)
Published Online	8 years, 7 months ago (Jan. 9, 2017)
Published Print	8 years, 3 months ago (May 1, 2017)

Funders 4

Research Grants Council, University Grants Committee 10.13039/501100002920
Region: Asia
pri (Universities (academic only))
Labels5
1. 研究資助局
2. 研究資助局
3. 研究資助局
4. 研究資助局
5. 研究資助局
Awards4
1. N_CUHK405/12
2. AoE/P‐02/12
3. 14204616
4. 14207515
Innovation and Technology Commission - Hong Kong 10.13039/501100007156
Region: Asia
gov (National government)
Labels1
1. Innovation and Technology Commission of Hong Kong Special Administrative Government
Chinese University of Hong Kong 10.13039/501100004853
Region: Asia
gov (Universities (academic only))
Labels3
1. The Chinese University of Hong Kong
2. 香港中文大学
3. CUHK
Awards1
1. ITS/096/14
National Natural Science Foundation of China 10.13039/501100001809
Region: Asia
gov (National government)
Labels11
1. Chinese National Science Foundation
2. Natural Science Foundation of China
3. National Science Foundation of China
4. NNSF of China
5. NSF of China
6. 国家自然科学基金委员会
7. National Nature Science Foundation of China
8. Guójiā Zìrán Kēxué Jījīn Wěiyuánhuì
9. NSFC
10. NNSF
11. NNSFC
Awards1
1. 61229401

BibTeX

@article{Chen_2017, title={Epitaxial Stitching and Stacking Growth of Atomically Thin Transition‐Metal Dichalcogenides (TMDCs) Heterojunctions}, volume={27}, ISSN={1616-3028}, url={http://dx.doi.org/10.1002/adfm.201603884}, DOI={10.1002/adfm.201603884}, number={19}, journal={Advanced Functional Materials}, publisher={Wiley}, author={Chen, Kun and Wan, Xi and Xu, Jianbin}, year={2017}, month=jan }

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