DOI: 10.1002/adfm.201500848. Disorder‐Induced Localization in Crystalline Pseudo‐Binary GeTe–Sb2Te3 Alloys between Ge3Sb2Te6 and GeTe

Disorder‐Induced Localization in Crystalline Pseudo‐Binary GeTe–Sb2Te3 Alloys between Ge3Sb2Te6 and GeTe

10.1002/adfm.201500848

Crossref journal-article

Wiley

Advanced Functional Materials (311)

Abstract

Disorder has a tremendous impact on charge transport in crystalline compounds on the pseudo‐binary line between Sb2Te3 and GeTe. Directly after crystallization, the pronounced disorder on the cation sublattice renders crystalline Ge1Sb2Te4—a composition with a carrier density of the order of 1020 cm−3—an Anderson insulator. Annealing, however, induces the reduction of disorder and eventually triggers an insulator‐to‐metal transition. This study presents data on the electrical properties, the optical conductivity, and structural properties of the pseudo‐binary compositions between Ge3Sb2Te6 and GeTe. In contrast to the preceding investigations, which rely on the annealing temperature for tuning the electrical properties, this study elucidates the impact of stoichiometry and demonstrates that the stoichiometry may be employed as an alternative control parameter for the metal‐to‐insulator transition. The combination of annealing temperature and stoichiometry, therefore, provides a rich playground for tailoring disorder and, as a consequence, the transport of charge.

Bibliography

Jost, P., Volker, H., Poitz, A., Poltorak, C., Zalden, P., SchÃ¤fer, T., Lange, F. R. L., Schmidt, R. M., HollÃ¤nder, B., Wirtssohn, M. R., & Wuttig, M. (2015). DisorderâInduced Localization in Crystalline PseudoâBinary GeTeâSb2Te3 Alloys between Ge3Sb2Te6 and GeTe. Advanced Functional Materials, 25(40), 6399â6406. Portico.

Authors 11

Peter Jost (first)
Hanno Volker (additional)
Annika Poitz (additional)
Christian Poltorak (additional)
Peter Zalden (additional)
Tobias Schäfer (additional)
Felix R. L. Lange (additional)
Rüdiger M. Schmidt (additional)
Bernd Holländer (additional)
Matti R. Wirtssohn (additional)
Matthias Wuttig (additional)

References 35 Referenced 62

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Dates

Type	When
Created	10 years, 2 months ago (May 21, 2015, 1:34 p.m.)
Deposited	1 year, 11 months ago (Sept. 10, 2023, 10:37 p.m.)
Indexed	1 day, 20 hours ago (Aug. 19, 2025, 6:40 a.m.)
Issued	10 years, 3 months ago (May 21, 2015)
Published	10 years, 3 months ago (May 21, 2015)
Published Online	10 years, 3 months ago (May 21, 2015)
Published Print	9 years, 10 months ago (Oct. 1, 2015)

Funders 1

European Union Seventh Framework Programme 10.13039/100011102 Seventh Framework Programme
Region: Europe
gov (National government)
Labels13
1. EC Seventh Framework Programm
2. European Commission Seventh Framework Programme
3. EU Seventh Framework Programme
4. European Union Seventh Framework Programme
5. EU 7th Framework Programme
6. European Union 7th Framework Programme
7. Siebten Rahmenprogramm
8. Séptimo Programa Marco
9. Septième programme-cadre
10. Settimo programma quadro
11. 7th Framework Programme
12. Seventh EU Framework Programme
13. FP7
Awards2
1. 340698
2. FP7/2007-2013

BibTeX

@article{Jost_2015, title={Disorder‐Induced Localization in Crystalline Pseudo‐Binary GeTe–Sb2Te3 Alloys between Ge3Sb2Te6 and GeTe}, volume={25}, ISSN={1616-3028}, url={http://dx.doi.org/10.1002/adfm.201500848}, DOI={10.1002/adfm.201500848}, number={40}, journal={Advanced Functional Materials}, publisher={Wiley}, author={Jost, Peter and Volker, Hanno and Poitz, Annika and Poltorak, Christian and Zalden, Peter and Schäfer, Tobias and Lange, Felix R. L. and Schmidt, Rüdiger M. and Holländer, Bernd and Wirtssohn, Matti R. and Wuttig, Matthias}, year={2015}, month=may, pages={6399–6406} }

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