DOI: 10.1002/adfm.201401504. Novel and Enhanced Optoelectronic Performances of Multilayer MoS<sub>2</sub>–WS<sub>2</sub> Heterostructure Transistors

Novel and Enhanced Optoelectronic Performances of Multilayer MoS2–WS2 Heterostructure Transistors

10.1002/adfm.201401504

Crossref journal-article

Wiley

Advanced Functional Materials (311)

Abstract

Van der Waals heterostructures designed by assembling isolated two‐dimensional (2D) crystals have emerged as a new class of artificial materials with interesting and unusual physical properties. Here, the multilayer MoS2–WS2 heterostructures with different configurations are reported and their optoelectronic properties are studied. It is shown that the new heterostructured material possesses new functionalities and superior electrical and optoelectronic properties that far exceed the one for their constituents, MoS2 or WS2. The vertical transistor exhibits a novel rectifying and bipolar behavior, and can also act as photovoltaic cell and self‐driven photodetector with photo‐switching ratio exceeding 103. The planar device also exhibits high field‐effect ON/OFF ratio (>105), high electron mobility of 65 cm2/Vs, and high photoresponsivity of 1.42 A/W compared to that in isolated multilayer MoS2 or WS2 nanoflake transistors. The results suggest that formation of MoS2–WS2 heterostructures could significantly enhance the performance of optoelectronic devices, thus open up possibilities for future nanoelectronic, photovoltaic, and optoelectronic applications.

Bibliography

Huo, N., Kang, J., Wei, Z., Li, S., Li, J., & Wei, S. (2014). Novel and Enhanced Optoelectronic Performances of Multilayer MoS2âWS2 Heterostructure Transistors. Advanced Functional Materials, 24(44), 7025â7031. Portico.

Authors 6

Nengjie Huo (first)
Jun Kang (additional)
Zhongming Wei (additional)
Shu‐Shen Li (additional)
Jingbo Li (additional)
Su‐Huai Wei (additional)

References 32 Referenced 428

Dates

Type	When
Created	10 years, 11 months ago (Sept. 5, 2014, 4:45 a.m.)
Deposited	1 year, 10 months ago (Oct. 16, 2023, 2:43 p.m.)
Indexed	2 days, 17 hours ago (Sept. 2, 2025, 6:47 a.m.)
Issued	11 years ago (Sept. 5, 2014)
Published	11 years ago (Sept. 5, 2014)
Published Online	11 years ago (Sept. 5, 2014)
Published Print	10 years, 10 months ago (Nov. 1, 2014)

Funders 0

None

BibTeX

@article{Huo_2014, title={Novel and Enhanced Optoelectronic Performances of Multilayer MoS2–WS2 Heterostructure Transistors}, volume={24}, ISSN={1616-3028}, url={http://dx.doi.org/10.1002/adfm.201401504}, DOI={10.1002/adfm.201401504}, number={44}, journal={Advanced Functional Materials}, publisher={Wiley}, author={Huo, Nengjie and Kang, Jun and Wei, Zhongming and Li, Shu‐Shen and Li, Jingbo and Wei, Su‐Huai}, year={2014}, month=sep, pages={7025–7031} }

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