DOI: 10.1002/adfm.201300283. Flexible Nonvolatile Transistor Memory Devices Based on One‐Dimensional Electrospun P3HT:Au Hybrid Nanofibers

Flexible Nonvolatile Transistor Memory Devices Based on One‐Dimensional Electrospun P3HT:Au Hybrid Nanofibers

10.1002/adfm.201300283

Crossref journal-article

Wiley

Advanced Functional Materials (311)

Abstract

AbstractA novel flexible nonvolatile flash transistor memory devices on polyethylene naphthalate (PEN) substrate using 1D electrospun nanofiber of poly(3‐hexylthiophene) (P3HT):gold nanoparticles (Au NPs) hybrid as the channel is presented. The Au NPs are functionalized with self‐assembled monolayer (SAM) of para‐substituted amino (Au‐NH2), methyl (Au‐CH3) or trifluoromethyl (Au‐CF3) tail groups on the benzenethiol moiety. They are employed as localized charge traps across the nanofiber channel and program/erase the device towards low conductance (OFF)/high conductance (ON) states under the applied electrical field. With the low operation voltage of ±5 V, the hybrid nanofiber transistor memories exhibit a 3.5–10.6 V threshold voltage shifting and at least 104 s data retention, with a minimum effect on ≈100 programmed/erased stress endurances. The dipoles of the SAM probably modify the work function of the Au NPs associated with the P3HT nanofiber channel and manifest the degree of negative threshold voltage shifting in an order of Au‐NH2 > Au‐CH3 > Au‐CF3. The devices remain reliable and stable even under the bending conditions (radius: 5–30 mm) or 1000 repetitive bending cycles. The hybrid nanofiber can be used to obtain high‐performance digital nanoscale memories for flexible high density data storage devices.

Bibliography

Chang, H., Liu, C., & Chen, W. (2013). Flexible Nonvolatile Transistor Memory Devices Based on OneâDimensional Electrospun P3HT:Au Hybrid Nanofibers. Advanced Functional Materials, 23(39), 4960â4968. Portico.

Authors 3

Hsuan‐Chun Chang (first)
Cheng‐Liang Liu (additional)
Wen‐Chang Chen (additional)

References 40 Referenced 129

{'key': 'e_1_2_7_1_2', 'first-page': '2196', 'volume': '2', 'author': 'Liu C.‐L.', 'year': '2011', 'journal-title': 'Polym. Chem.'} / Polym. Chem. by Liu C.‐L. (2011)
10.1002/adma.201103862
10.1002/adma.201103647
10.1002/adfm.200500429
10.1016/j.progpolymsci.2008.08.001
10.1021/cm102006v
10.1039/c1jm11050k
10.1002/adma.201000740
10.1039/b911493a
10.1021/nn203847r
10.1002/adfm.200901677
10.1002/adma.201201195
10.1039/c1jm12113h
10.1039/c2nr30882g
10.1063/1.4704571
10.1063/1.4737422
10.1021/ar800030w
10.1002/adma.200500928
10.1002/anie.200703238
10.1116/1.2375083
10.1021/nl1013713
10.1109/TNANO.2009.2021995
10.1039/c1jm10473j
10.1021/nl025532n
10.1021/jp0498421
10.1063/1.1759069
10.1021/nn800808s
10.1002/adfm.201200706
10.1039/c1ee02201f
10.1021/ma102286m
10.1039/c2jm14239b
10.1021/ja904882m
10.1039/B814833C
10.1021/nl015667d
10.1063/1.116085
10.1021/nl1009662
{'key': 'e_1_2_7_37_2', 'volume-title': 'Physics of Semiconductor Devices', 'author': 'Sze S. M.', 'year': '1981'} / Physics of Semiconductor Devices by Sze S. M. (1981)
10.1021/nl025577o
10.1002/adma.200401216
10.1039/c39950001655

Dates

Type	When
Created	12 years, 4 months ago (April 18, 2013, 9:52 a.m.)
Deposited	1 year, 10 months ago (Oct. 11, 2023, 12:15 a.m.)
Indexed	2 months, 2 weeks ago (June 17, 2025, 3:47 a.m.)
Issued	12 years, 4 months ago (April 18, 2013)
Published	12 years, 4 months ago (April 18, 2013)
Published Online	12 years, 4 months ago (April 18, 2013)
Published Print	11 years, 10 months ago (Oct. 18, 2013)

Funders 0

None

BibTeX

@article{Chang_2013, title={Flexible Nonvolatile Transistor Memory Devices Based on One‐Dimensional Electrospun P3HT:Au Hybrid Nanofibers}, volume={23}, ISSN={1616-3028}, url={http://dx.doi.org/10.1002/adfm.201300283}, DOI={10.1002/adfm.201300283}, number={39}, journal={Advanced Functional Materials}, publisher={Wiley}, author={Chang, Hsuan‐Chun and Liu, Cheng‐Liang and Chen, Wen‐Chang}, year={2013}, month=apr, pages={4960–4968} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        6,
        17
      ]
    ],
    "date-time": "2025-06-17T07:47:36Z",
    "timestamp": 1750146456735
  },
  "reference-count": 40,
  "publisher": "Wiley",
  "issue": "39",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            2013,
            4,
            18
          ]
        ],
        "date-time": "2013-04-18T00:00:00Z",
        "timestamp": 1366243200000
      },
      "content-version": "vor",
      "delay-in-days": 0,
      "URL": "http://onlinelibrary.wiley.com/termsAndConditions#vor"
    }
  ],
  "content-domain": {
    "domain": [],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        2013,
        10,
        18
      ]
    ]
  },
  "abstract": "<jats:title>Abstract</jats:title><jats:p>A novel flexible nonvolatile flash transistor memory devices on polyethylene naphthalate (PEN) substrate using 1D electrospun nanofiber of poly(3\u2010hexylthiophene) (P3HT):gold nanoparticles (Au NPs) hybrid as the channel is presented. The Au NPs are functionalized with self\u2010assembled monolayer (SAM) of para\u2010substituted amino (Au\u2010NH<jats:sub>2</jats:sub>), methyl (Au\u2010CH<jats:sub>3</jats:sub>) or trifluoromethyl (Au\u2010CF<jats:sub>3</jats:sub>) tail groups on the benzenethiol moiety. They are employed as localized charge traps across the nanofiber channel and program/erase the device towards low conductance (OFF)/high conductance (ON) states under the applied electrical field. With the low operation voltage of \u00b15 V, the hybrid nanofiber transistor memories exhibit a 3.5\u201310.6 V threshold voltage shifting and at least 10<jats:sup>4</jats:sup> s data retention, with a minimum effect on \u2248100 programmed/erased stress endurances. The dipoles of the SAM probably modify the work function of the Au NPs associated with the P3HT nanofiber channel and manifest the degree of negative threshold voltage shifting in an order of Au\u2010NH<jats:sub>2</jats:sub> &gt; Au\u2010CH<jats:sub>3</jats:sub> &gt; Au\u2010CF<jats:sub>3</jats:sub>. The devices remain reliable and stable even under the bending conditions (radius: 5\u201330 mm) or 1000 repetitive bending cycles. The hybrid nanofiber can be used to obtain high\u2010performance digital nanoscale memories for flexible high density data storage devices.</jats:p>",
  "DOI": "10.1002/adfm.201300283",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2013,
        4,
        18
      ]
    ],
    "date-time": "2013-04-18T13:52:39Z",
    "timestamp": 1366293159000
  },
  "page": "4960-4968",
  "source": "Crossref",
  "is-referenced-by-count": 129,
  "title": "Flexible Nonvolatile Transistor Memory Devices Based on One\u2010Dimensional Electrospun P3HT:Au Hybrid Nanofibers",
  "prefix": "10.1002",
  "volume": "23",
  "author": [
    {
      "given": "Hsuan\u2010Chun",
      "family": "Chang",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "Cheng\u2010Liang",
      "family": "Liu",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Wen\u2010Chang",
      "family": "Chen",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "311",
  "published-online": {
    "date-parts": [
      [
        2013,
        4,
        18
      ]
    ]
  },
  "reference": [
    {
      "key": "e_1_2_7_1_2",
      "first-page": "2196",
      "volume": "2",
      "author": "Liu C.\u2010L.",
      "year": "2011",
      "journal-title": "Polym. Chem."
    },
    {
      "key": "e_1_2_7_2_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1002/adma.201103862"
    },
    {
      "key": "e_1_2_7_3_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1002/adma.201103647"
    },
    {
      "key": "e_1_2_7_4_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1002/adfm.200500429"
    },
    {
      "key": "e_1_2_7_5_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/j.progpolymsci.2008.08.001"
    },
    {
      "key": "e_1_2_7_6_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/cm102006v"
    },
    {
      "key": "e_1_2_7_7_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1039/c1jm11050k"
    },
    {
      "key": "e_1_2_7_8_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1002/adma.201000740"
    },
    {
      "key": "e_1_2_7_9_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1039/b911493a"
    },
    {
      "key": "e_1_2_7_10_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/nn203847r"
    },
    {
      "key": "e_1_2_7_11_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1002/adfm.200901677"
    },
    {
      "key": "e_1_2_7_12_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1002/adma.201201195"
    },
    {
      "key": "e_1_2_7_13_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1039/c1jm12113h"
    },
    {
      "key": "e_1_2_7_14_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1039/c2nr30882g"
    },
    {
      "key": "e_1_2_7_15_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.4704571"
    },
    {
      "key": "e_1_2_7_16_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.4737422"
    },
    {
      "key": "e_1_2_7_17_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/ar800030w"
    },
    {
      "key": "e_1_2_7_18_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1002/adma.200500928"
    },
    {
      "key": "e_1_2_7_19_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1002/anie.200703238"
    },
    {
      "key": "e_1_2_7_20_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1116/1.2375083"
    },
    {
      "key": "e_1_2_7_21_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/nl1013713"
    },
    {
      "key": "e_1_2_7_22_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/TNANO.2009.2021995"
    },
    {
      "key": "e_1_2_7_23_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1039/c1jm10473j"
    },
    {
      "key": "e_1_2_7_24_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/nl025532n"
    },
    {
      "key": "e_1_2_7_25_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/jp0498421"
    },
    {
      "key": "e_1_2_7_26_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.1759069"
    },
    {
      "key": "e_1_2_7_27_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/nn800808s"
    },
    {
      "key": "e_1_2_7_28_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1002/adfm.201200706"
    },
    {
      "key": "e_1_2_7_29_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1039/c1ee02201f"
    },
    {
      "key": "e_1_2_7_30_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/ma102286m"
    },
    {
      "key": "e_1_2_7_31_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1039/c2jm14239b"
    },
    {
      "key": "e_1_2_7_32_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/ja904882m"
    },
    {
      "key": "e_1_2_7_33_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1039/B814833C"
    },
    {
      "key": "e_1_2_7_34_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/nl015667d"
    },
    {
      "key": "e_1_2_7_35_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.116085"
    },
    {
      "key": "e_1_2_7_36_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/nl1009662"
    },
    {
      "key": "e_1_2_7_37_2",
      "volume-title": "Physics of Semiconductor Devices",
      "author": "Sze S. M.",
      "year": "1981"
    },
    {
      "key": "e_1_2_7_38_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/nl025577o"
    },
    {
      "key": "e_1_2_7_39_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1002/adma.200401216"
    },
    {
      "key": "e_1_2_7_40_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1039/c39950001655"
    }
  ],
  "container-title": "Advanced Functional Materials",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fadfm.201300283",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201300283",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        10,
        11
      ]
    ],
    "date-time": "2023-10-11T04:15:23Z",
    "timestamp": 1696997723000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://onlinelibrary.wiley.com/doi/10.1002/adfm.201300283"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2013,
        4,
        18
      ]
    ]
  },
  "references-count": 40,
  "journal-issue": {
    "issue": "39",
    "published-print": {
      "date-parts": [
        [
          2013,
          10,
          18
        ]
      ]
    }
  },
  "alternative-id": [
    "10.1002/adfm.201300283"
  ],
  "URL": "http://dx.doi.org/10.1002/adfm.201300283",
  "relation": {},
  "ISSN": [
    "1616-301X",
    "1616-3028"
  ],
  "subject": [],
  "container-title-short": "Adv Funct Materials",
  "published": {
    "date-parts": [
      [
        2013,
        4,
        18
      ]
    ]
  }
}