DOI: 10.1002/adfm.201202724. All‐Polymer Bistable Resistive Memory Device Based on Nanoscale Phase‐Separated PCBM‐Ferroelectric Blends

All‐Polymer Bistable Resistive Memory Device Based on Nanoscale Phase‐Separated PCBM‐Ferroelectric Blends

10.1002/adfm.201202724

Crossref journal-article

Wiley

Advanced Functional Materials (311)

Abstract

AbstractAll polymer nonvolatile bistable memory devices are fabricated from blends of ferroelectric poly(vinylidenefluoride–trifluoroethylene (P(VDF‐TrFE)) and n‐type semiconducting [6,6]‐phenyl‐C61‐butyric acid methyl ester (PCBM). The nanoscale phase separated films consist of PCBM domains that extend from bottom to top electrode, surrounded by a ferroelectric P(VDF‐TrFE) matrix. Highly conducting poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) polymer electrodes are used to engineer band offsets at the interfaces. The devices display resistive switching behavior due to modulation of this injection barrier. With careful optimization of the solvent and processing conditions, it is possible to spin cast very smooth blend films (Rrms ≈ 7.94 nm) and with good reproducibility. The devices exhibit high Ion/Ioff ratios (≈3 × 103), low read voltages (≈5 V), excellent dielectric response at high frequencies (ϵr ≈ 8.3 at 1 MHz), and excellent retention characteristics up to 10 000 s.

Authors 4

M. A. Khan (first)
Unnat S. Bhansali (additional)
Dongkyu Cha (additional)
H. N. Alshareef (additional)

References 19 Referenced 75

Dates

Type	When
Created	12 years, 9 months ago (Nov. 21, 2012, 4:41 a.m.)
Deposited	1 year, 10 months ago (Oct. 11, 2023, 7:31 a.m.)
Indexed	1 month ago (July 26, 2025, 5:17 a.m.)
Issued	12 years, 9 months ago (Nov. 21, 2012)
Published	12 years, 9 months ago (Nov. 21, 2012)
Published Online	12 years, 9 months ago (Nov. 21, 2012)
Published Print	12 years, 3 months ago (May 6, 2013)

Funders 0

None

BibTeX

@article{Khan_2012, title={All‐Polymer Bistable Resistive Memory Device Based on Nanoscale Phase‐Separated PCBM‐Ferroelectric Blends}, volume={23}, ISSN={1616-3028}, url={http://dx.doi.org/10.1002/adfm.201202724}, DOI={10.1002/adfm.201202724}, number={17}, journal={Advanced Functional Materials}, publisher={Wiley}, author={Khan, M. A. and Bhansali, Unnat S. and Cha, Dongkyu and Alshareef, H. N.}, year={2012}, month=nov, pages={2145–2152} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        26
      ]
    ],
    "date-time": "2025-07-26T09:17:06Z",
    "timestamp": 1753521426606
  },
  "reference-count": 19,
  "publisher": "Wiley",
  "issue": "17",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            2012,
            11,
            21
          ]
        ],
        "date-time": "2012-11-21T00:00:00Z",
        "timestamp": 1353456000000
      },
      "content-version": "vor",
      "delay-in-days": 0,
      "URL": "http://onlinelibrary.wiley.com/termsAndConditions#vor"
    }
  ],
  "content-domain": {
    "domain": [],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        2013,
        5,
        6
      ]
    ]
  },
  "abstract": "<jats:title>Abstract</jats:title><jats:p>All polymer nonvolatile bistable memory devices are fabricated from blends of ferroelectric poly(vinylidenefluoride\u2013trifluoroethylene (P(VDF\u2010TrFE)) and n\u2010type semiconducting [6,6]\u2010phenyl\u2010C61\u2010butyric acid methyl ester (PCBM). The nanoscale phase separated films consist of PCBM domains that extend from bottom to top electrode, surrounded by a ferroelectric P(VDF\u2010TrFE) matrix. Highly conducting poly(3,4\u2010ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) polymer electrodes are used to engineer band offsets at the interfaces. The devices display resistive switching behavior due to modulation of this injection barrier. With careful optimization of the solvent and processing conditions, it is possible to spin cast very smooth blend films (R<jats:sub>rms</jats:sub> \u2248 7.94 nm) and with good reproducibility. The devices exhibit high <jats:italic>I</jats:italic><jats:sub>on</jats:sub>/<jats:italic>I</jats:italic><jats:sub>off</jats:sub> ratios (\u22483 \u00d7 10<jats:sup>3</jats:sup>), low read voltages (\u22485 V), excellent dielectric response at high frequencies (<jats:italic>\u03f5</jats:italic><jats:sub>r</jats:sub> \u2248 8.3 at 1 MHz), and excellent retention characteristics up to 10 000 s.</jats:p>",
  "DOI": "10.1002/adfm.201202724",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2012,
        11,
        21
      ]
    ],
    "date-time": "2012-11-21T09:41:46Z",
    "timestamp": 1353490906000
  },
  "page": "2145-2152",
  "source": "Crossref",
  "is-referenced-by-count": 75,
  "title": "All\u2010Polymer Bistable Resistive Memory Device Based on Nanoscale Phase\u2010Separated PCBM\u2010Ferroelectric Blends",
  "prefix": "10.1002",
  "volume": "23",
  "author": [
    {
      "given": "M. A.",
      "family": "Khan",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "Unnat S.",
      "family": "Bhansali",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Dongkyu",
      "family": "Cha",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "H. N.",
      "family": "Alshareef",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "311",
  "published-online": {
    "date-parts": [
      [
        2012,
        11,
        21
      ]
    ]
  },
  "reference": [
    {
      "key": "e_1_2_6_1_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/j.progpolymsci.2008.08.001"
    },
    {
      "key": "e_1_2_6_2_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/nn100877s"
    },
    {
      "key": "e_1_2_6_3_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1002/adma.201103647"
    },
    {
      "key": "e_1_2_6_4_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1002/marc.201000695"
    },
    {
      "key": "e_1_2_6_5_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.3656968"
    },
    {
      "key": "e_1_2_6_6_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1109/TDEI.2010.5539685"
    },
    {
      "key": "e_1_2_6_7_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1002/adma.200900759"
    },
    {
      "key": "e_1_2_6_8_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/nmat2207"
    },
    {
      "key": "e_1_2_6_9_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1002/adfm.200900383"
    },
    {
      "key": "e_1_2_6_10_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1002/adfm.201001505"
    },
    {
      "key": "e_1_2_6_11_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/am300231v"
    },
    {
      "key": "e_1_2_6_12_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1002/adfm.200600484"
    },
    {
      "key": "e_1_2_6_13_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.2132062"
    },
    {
      "key": "e_1_2_6_14_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1039/c0jm00666a"
    },
    {
      "key": "e_1_2_6_15_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/j.orgel.2011.08.032"
    },
    {
      "key": "e_1_2_6_16_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/j.vibspec.2008.05.004"
    },
    {
      "key": "e_1_2_6_17_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/ma00193a016"
    },
    {
      "key": "e_1_2_6_18_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1007/s00289-004-0324-7"
    },
    {
      "key": "e_1_2_6_19_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1002/adma.201200626"
    }
  ],
  "container-title": "Advanced Functional Materials",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fadfm.201202724",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201202724",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        10,
        11
      ]
    ],
    "date-time": "2023-10-11T11:31:49Z",
    "timestamp": 1697023909000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://onlinelibrary.wiley.com/doi/10.1002/adfm.201202724"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2012,
        11,
        21
      ]
    ]
  },
  "references-count": 19,
  "journal-issue": {
    "issue": "17",
    "published-print": {
      "date-parts": [
        [
          2013,
          5,
          6
        ]
      ]
    }
  },
  "alternative-id": [
    "10.1002/adfm.201202724"
  ],
  "URL": "http://dx.doi.org/10.1002/adfm.201202724",
  "relation": {},
  "ISSN": [
    "1616-301X",
    "1616-3028"
  ],
  "subject": [],
  "container-title-short": "Adv Funct Materials",
  "published": {
    "date-parts": [
      [
        2012,
        11,
        21
      ]
    ]
  }
}