DOI: 10.1002/adfm.201202383. Beyond von‐Neumann Computing with Nanoscale Phase‐Change Memory Devices

Beyond von‐Neumann Computing with Nanoscale Phase‐Change Memory Devices

10.1002/adfm.201202383

Crossref journal-article

Wiley

Advanced Functional Materials (311)

Abstract

AbstractHistorically, the application of phase‐change materials and devices has been limited to the provision of non‐volatile memories. Recently, however, the potential has been demonstrated for using phase‐change devices as the basis for new forms of brain‐like computing, by exploiting their multilevel resistance capability to provide electronic mimics of biological synapses. Here, a different and previously under‐explored property that is also intrinsic to phase‐change materials and devices, namely accumulation, is exploited to demonstrate that nanometer‐scale electronic phase‐change devices can also provide a powerful form of arithmetic computing. Complicated arithmetic operations are carried out, including parallel factorization and fractional division, using simple nanoscale phase‐change cells that process and store data simultaneously and at the same physical location, promising a most efficient and effective means for implementing beyond von‐Neumann computing. This same accumulation property can be used to provide a particularly simple form phase‐change integrate‐and‐fire “neuron”, which, by combining both phase‐change synapse and neuron electronic mimics, potentially opens up a route to the realization of all‐phase‐change neuromorphic processing.

Bibliography

Wright, C. D., Hosseini, P., & Diosdado, J. A. V. (2012). Beyond vonâNeumann Computing with Nanoscale PhaseâChange Memory Devices. Advanced Functional Materials, 23(18), 2248â2254. Portico.

Authors 3

C. David Wright (first)
Peiman Hosseini (additional)
Jorge A. Vazquez Diosdado (additional)

References 44 Referenced 314

International Technology Roadmap for Semiconductors Executive Summary Emerging Research Devices Grand Challenges p. 30;www.itrs.net/Links/2011ITRS/Home2011.htm(accessed August 2012).
{'key': 'e_1_2_7_2_2', 'volume-title': 'The Collected Works for John von Neumann', 'author': 'von Neumann J.', 'year': '1963'} / The Collected Works for John von Neumann by von Neumann J. (1963)
10.1145/359576.359579
10.1109/TCT.1971.1083337
10.1038/nature06932
10.1080/00018732.2010.544961
10.1002/adma.200900375
10.1002/adfm.201200244
10.1038/nmat3054
10.1002/adma.201103053
10.1038/nature08812
10.1166/sam.2011.1177
10.1103/PhysRevLett.21.1450
10.1002/adma.201004255
10.1038/nmat2009
10.1063/1.3506584
10.1109/TNANO.2010.2089638
10.1063/1.1834718
10.1021/nl201040y
{'key': 'e_1_2_7_20_2', 'author': 'Kuzum D.', 'year': '2011', 'journal-title': 'Proc. IEDM'} / Proc. IEDM by Kuzum D. (2011)
{'key': 'e_1_2_7_21_2', 'volume': '619', 'author': 'Suri M.', 'year': '2011', 'journal-title': 'Int. Conf. Neural Networks (IJCNN)'} / Int. Conf. Neural Networks (IJCNN) by Suri M. (2011)
10.1021/nl902777z
10.1109/JPROC.2010.2070050
10.1002/adfm.201102940
10.1016/j.jnoncrysol.2007.09.111
10.1063/1.2931951
{'key': 'e_1_2_7_27_2', 'volume': '803', 'author': 'Ovshinsky S. R.', 'year': '2004', 'journal-title': 'MRS Proc.'} / MRS Proc. by Ovshinsky S. R. (2004)
10.1143/JJAP.43.4695
10.1002/adma.201101060
10.1063/1.1875742
10.1016/j.sse.2010.04.020
{'key': 'e_1_2_7_32_2', 'author': 'Papandreou N.', 'year': '2011', 'journal-title': 'Proc. IEDM'} / Proc. IEDM by Papandreou N. (2011)
10.1109/TED.2009.2016397
10.1109/TED.2009.2016398
10.1126/science.1221561
10.1109/TNANO.2005.861400
10.1021/nl104537c
10.1126/science.1201938
10.1038/354515a0
10.1007/978-1-4613-1639-8
10.1007/s12559-008-9003-6
10.3389/fnins.2011.00073
10.7551/mitpress/1250.001.0001
NXP Semiconductors http://www.nxp.com/products/logic/gates/nand_gates/series/74F133.html(accessed August 2012).

Dates

Type	When
Created	12 years, 8 months ago (Dec. 13, 2012, 1:05 p.m.)
Deposited	1 year, 10 months ago (Oct. 11, 2023, 8:16 a.m.)
Indexed	5 days, 9 hours ago (Aug. 27, 2025, 12:28 p.m.)
Issued	12 years, 8 months ago (Dec. 12, 2012)
Published	12 years, 8 months ago (Dec. 12, 2012)
Published Online	12 years, 8 months ago (Dec. 12, 2012)
Published Print	12 years, 3 months ago (May 13, 2013)

Funders 0

None

BibTeX

@article{Wright_2012, title={Beyond von‐Neumann Computing with Nanoscale Phase‐Change Memory Devices}, volume={23}, ISSN={1616-3028}, url={http://dx.doi.org/10.1002/adfm.201202383}, DOI={10.1002/adfm.201202383}, number={18}, journal={Advanced Functional Materials}, publisher={Wiley}, author={Wright, C. David and Hosseini, Peiman and Diosdado, Jorge A. Vazquez}, year={2012}, month=dec, pages={2248–2254} }

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