DOI: 10.1002/adfm.201103148. Synaptic Learning and Memory Functions Achieved Using Oxygen Ion Migration/Diffusion in an Amorphous InGaZnO Memristor

Synaptic Learning and Memory Functions Achieved Using Oxygen Ion Migration/Diffusion in an Amorphous InGaZnO Memristor

10.1002/adfm.201103148

Crossref journal-article

Wiley

Advanced Functional Materials (311)

Abstract

AbstractA single synaptic device with inherent learning and memory functions is demonstrated based on an amorphous InGaZnO (α‐IGZO) memristor; several essential synaptic functions are simultaneously achieved in such a single device, including nonlinear transmission characteristics, spike‐rate‐dependent and spike‐timing‐dependent plasticity, long‐term/short‐term plasticity (LSP and STP) and “learning‐experience” behavior. These characteristics bear striking resemblances to certain learning and memory functions of biological systems. Especially, a “learning‐experience” function is obtained for the first time, which is thought to be related to the metastable local structures in α‐IGZO. These functions are interrelated: frequent stimulation can cause an enhancement of LTP, both spike‐rate‐dependent and spike‐timing‐dependent plasticity is the same on this point; and, the STP‐to‐LTP transition can occur through repeated “stimulation” training. The physical mechanism of device operation, which does not strictly follow the memristor model, is attributed to oxygen ion migration/diffusion. A correlation between short‐term memory and ion diffusion is established by studying the temperature dependence of the relaxation processes of STP and ion diffusion. The realization of important synaptic functions and the establishment of a dynamic model would promote more accurate modeling of the synapse for artificial neural network.

Bibliography

Wang, Z. Q., Xu, H. Y., Li, X. H., Yu, H., Liu, Y. C., & Zhu, X. J. (2012). Synaptic Learning and Memory Functions Achieved Using Oxygen Ion Migration/Diffusion in an Amorphous InGaZnO Memristor. Advanced Functional Materials, 22(13), 2759â2765. Portico.

Authors 6

Zhong Qiang Wang (first)
Hai Yang Xu (additional)
Xing Hua Li (additional)
Hao Yu (additional)
Yi Chun Liu (additional)
Xiao Juan Zhu (additional)

References 27 Referenced 717

Dates

Type	When
Created	13 years, 4 months ago (April 10, 2012, 3:22 a.m.)
Deposited	1 year, 10 months ago (Oct. 10, 2023, 11 p.m.)
Indexed	10 hours, 35 minutes ago (Aug. 29, 2025, 5:49 a.m.)
Issued	13 years, 4 months ago (April 10, 2012)
Published	13 years, 4 months ago (April 10, 2012)
Published Online	13 years, 4 months ago (April 10, 2012)
Published Print	13 years, 1 month ago (July 10, 2012)

Funders 0

None

BibTeX

@article{Wang_2012, title={Synaptic Learning and Memory Functions Achieved Using Oxygen Ion Migration/Diffusion in an Amorphous InGaZnO Memristor}, volume={22}, ISSN={1616-3028}, url={http://dx.doi.org/10.1002/adfm.201103148}, DOI={10.1002/adfm.201103148}, number={13}, journal={Advanced Functional Materials}, publisher={Wiley}, author={Wang, Zhong Qiang and Xu, Hai Yang and Li, Xing Hua and Yu, Hao and Liu, Yi Chun and Zhu, Xiao Juan}, year={2012}, month=apr, pages={2759–2765} }

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