DOI: 10.1002/adfm.201103119. Incipient Ferroelectricity in Al‐Doped HfO<sub>2</sub> Thin Films

Incipient Ferroelectricity in Al‐Doped HfO2 Thin Films

10.1002/adfm.201103119

Crossref journal-article

Wiley

Advanced Functional Materials (311)

Abstract

AbstractIncipient ferroelectricity is known to occur in perovskites such as SrTiO3, KTaO3, and CaTiO3. For the first time it is shown that the intensively researched HfO2 thin films (16 nm) also possess ferroelectric properties when aluminium is incorporated into the host lattice. Polarization measurements on Al:HfO2 based metal–insulator–metal capacitors show an antiferroelectric‐to‐ferroelectric phase transition depending on annealing conditions and aluminium content. Structural investigation of the electrically characterized capacitors by grazing incidence X‐ray diffraction is presented in order to gain further insight on the potential origin of ferroelectricity. The non‐centrosymmetry of the elementary cell, which is essential for ferroelectricity, is assumed to originate from an orthorhombic phase of space group Pbc21 stabilized for low Al doping in HfO2. The ferroelectric properties of the modified HfO2 thin films yield high potential for various ferroelectric, piezoelectric, and pyroelectric applications. Furthermore, due to the extensive knowledge accumulated by various research groups regarding the HfO2 dielectric, an immediate relevance of ferroelectric hafnium oxide thin films is anticipated by the authors.

Bibliography

Mueller, S., Mueller, J., Singh, A., Riedel, S., Sundqvist, J., Schroeder, U., & Mikolajick, T. (2012). Incipient Ferroelectricity in AlâDoped HfO2 Thin Films. Advanced Functional Materials, 22(11), 2412â2417. Portico.

Authors 7

Stefan Mueller (first)
Johannes Mueller (additional)
Aarti Singh (additional)
Stefan Riedel (additional)
Jonas Sundqvist (additional)
Uwe Schroeder (additional)
Thomas Mikolajick (additional)

References 34 Referenced 769

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Dates

Type	When
Created	13 years, 5 months ago (March 15, 2012, 3:15 a.m.)
Deposited	1 year, 10 months ago (Oct. 10, 2023, 11:13 p.m.)
Indexed	4 days, 2 hours ago (Aug. 19, 2025, 6:36 a.m.)
Issued	13 years, 5 months ago (March 15, 2012)
Published	13 years, 5 months ago (March 15, 2012)
Published Online	13 years, 5 months ago (March 15, 2012)
Published Print	13 years, 2 months ago (June 6, 2012)

Funders 0

None

BibTeX

@article{Mueller_2012, title={Incipient Ferroelectricity in Al‐Doped HfO2 Thin Films}, volume={22}, ISSN={1616-3028}, url={http://dx.doi.org/10.1002/adfm.201103119}, DOI={10.1002/adfm.201103119}, number={11}, journal={Advanced Functional Materials}, publisher={Wiley}, author={Mueller, Stefan and Mueller, Johannes and Singh, Aarti and Riedel, Stefan and Sundqvist, Jonas and Schroeder, Uwe and Mikolajick, Thomas}, year={2012}, month=mar, pages={2412–2417} }

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