DOI: 10.1002/adfm.201101418. Mechanistic Considerations of Bending‐Strain Effects within Organic Semiconductors on Polymer Dielectrics

Mechanistic Considerations of Bending‐Strain Effects within Organic Semiconductors on Polymer Dielectrics

10.1002/adfm.201101418

Crossref journal-article

Wiley

Advanced Functional Materials (311)

Abstract

AbstractThe development of organic transistors for flexible electronics requires the understanding of device behavior upon the application of strain. Here, a comprehensive study of the effect of polymer‐dielectric and semiconductor chemical structure on the device performance under applied strain is reported. The systematic change of the polymer dielectric results in the modulation of the effects of strain on the mobility of organic field‐effect transistor devices. A general method is demonstrated to lower the effects of strain in devices by covalent substitution of the dielectric surface. Additionally, the introduction of a hexyl chain at the peripheries of the organic semiconductor structure results in an inversion of the effects of strain on device mobility. This novel behavior may be explained by the capacitative coupling of the surface energy variations during applied strain.

Bibliography

Sokolov, A. N., Cao, Y., Johnson, O. B., & Bao, Z. (2011). Mechanistic Considerations of BendingâStrain Effects within Organic Semiconductors on Polymer Dielectrics. Advanced Functional Materials, 22(1), 175â183. Portico.

Authors 4

Anatoliy N. Sokolov (first)
Yadong Cao (additional)
Olasupo B. Johnson (additional)
Zhenan Bao (additional)

References 54 Referenced 83

10.1063/1.1579554
10.1063/1.2186384
{'key': 'e_1_2_7_3_2', 'first-page': '0935111', 'volume': '88', 'author': 'Koster L. J. A.', 'year': '2006', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. by Koster L. J. A. (2006)
10.1038/nature01949
10.1126/science.1179963
10.1063/1.1360785
{'key': 'e_1_2_7_7_2', 'first-page': '381', 'author': 'Torsi L.', 'year': '2005', 'journal-title': 'Anal. Chem.'} / Anal. Chem. by Torsi L. (2005)
10.1016/j.orgel.2008.12.001
10.1073/pnas.0802105105
10.1016/j.snb.2009.09.004
10.1002/adma.200902760
10.1007/s00216-005-3390-2
10.1201/9781420008012
10.1038/nature05427
10.1002/adma.200600634
10.1126/science.291.5508.1502
10.1073/pnas.0708340105
10.1021/cm049781j
10.1021/cr000013v
10.1021/cr050156n
{'key': 'e_1_2_7_21_2', 'first-page': '0433121', 'volume': '94', 'author': 'Zhang X.‐H.', 'year': '2009', 'journal-title': 'App. Phys. Lett.'} / App. Phys. Lett. by Zhang X.‐H. (2009)
10.1016/S1369-7021(06)71447-X
10.1063/1.123478
10.1063/1.2115075
10.1063/1.1868868
10.1016/j.jnoncrysol.2005.11.122
10.1143/JJAP.44.2841
10.1063/1.2948862
10.1063/1.3216587
10.1021/cm020866z
10.1002/adma.200902322
10.1002/adma.200500517
10.1021/cm049598q
10.1063/1.1565683
10.1016/j.tsf.2009.08.047
For each measurement between 120–300 VGSdata points were collected. The slope of theIDS1/2line was taken over the a 20 point average around maximum derivative point to establish a consistant average maximum mobility which would be independent of the shifting threshold voltage.
10.1021/cm0710599
10.1002/adma.200803328
The strain (S) can be approximated by the equationS=ds/2R wheredsis the thickness of the substrate (120 μm) andRis the bending radius.
10.1063/1.1826239
10.1038/nmat1105
10.1039/b921767c
10.1002/adfm.200390030
10.1038/nmat2059
10.1002/adma.201004187
10.1007/3-540-06054-5_10
10.1080/01411598908206863
10.1038/nmat1329
10.1021/ma970869a
10.1021/cm900637p
A previous report on the effects of strain on liquid crystalline OFET performance has demonstrated the use of an OTS‐functionalization PVA dielectric; however in the report the effects of stress on the OTS‐modified devices were not discussed. See the following reference.
10.1016/j.orgel.2009.11.014
10.1073/pnas.0701472104
10.1126/science.1146458

Dates

Type	When
Created	13 years, 10 months ago (Oct. 21, 2011, 8:43 a.m.)
Deposited	1 year, 10 months ago (Oct. 11, 2023, 6:45 p.m.)
Indexed	2 weeks, 3 days ago (Aug. 6, 2025, 9:55 a.m.)
Issued	13 years, 10 months ago (Oct. 21, 2011)
Published	13 years, 10 months ago (Oct. 21, 2011)
Published Online	13 years, 10 months ago (Oct. 21, 2011)
Published Print	13 years, 7 months ago (Jan. 11, 2012)

Funders 0

None

BibTeX

@article{Sokolov_2011, title={Mechanistic Considerations of Bending‐Strain Effects within Organic Semiconductors on Polymer Dielectrics}, volume={22}, ISSN={1616-3028}, url={http://dx.doi.org/10.1002/adfm.201101418}, DOI={10.1002/adfm.201101418}, number={1}, journal={Advanced Functional Materials}, publisher={Wiley}, author={Sokolov, Anatoliy N. and Cao, Yadong and Johnson, Olasupo B. and Bao, Zhenan}, year={2011}, month=oct, pages={175–183} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        6
      ]
    ],
    "date-time": "2025-08-06T13:55:23Z",
    "timestamp": 1754488523884
  },
  "reference-count": 54,
  "publisher": "Wiley",
  "issue": "1",
  "license": [
    {
      "start": {
        "date-parts": [
          [
            2011,
            10,
            21
          ]
        ],
        "date-time": "2011-10-21T00:00:00Z",
        "timestamp": 1319155200000
      },
      "content-version": "vor",
      "delay-in-days": 0,
      "URL": "http://onlinelibrary.wiley.com/termsAndConditions#vor"
    }
  ],
  "content-domain": {
    "domain": [],
    "crossmark-restriction": false
  },
  "published-print": {
    "date-parts": [
      [
        2012,
        1,
        11
      ]
    ]
  },
  "abstract": "<jats:title>Abstract</jats:title><jats:p>The development of organic transistors for flexible electronics requires the understanding of device behavior upon the application of strain. Here, a comprehensive study of the effect of polymer\u2010dielectric and semiconductor chemical structure on the device performance under applied strain is reported. The systematic change of the polymer dielectric results in the modulation of the effects of strain on the mobility of organic field\u2010effect transistor devices. A general method is demonstrated to lower the effects of strain in devices by covalent substitution of the dielectric surface. Additionally, the introduction of a hexyl chain at the peripheries of the organic semiconductor structure results in an inversion of the effects of strain on device mobility. This novel behavior may be explained by the capacitative coupling of the surface energy variations during applied strain.</jats:p>",
  "DOI": "10.1002/adfm.201101418",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2011,
        10,
        21
      ]
    ],
    "date-time": "2011-10-21T12:43:12Z",
    "timestamp": 1319200992000
  },
  "page": "175-183",
  "source": "Crossref",
  "is-referenced-by-count": 83,
  "title": "Mechanistic Considerations of Bending\u2010Strain Effects within Organic Semiconductors on Polymer Dielectrics",
  "prefix": "10.1002",
  "volume": "22",
  "author": [
    {
      "given": "Anatoliy N.",
      "family": "Sokolov",
      "sequence": "first",
      "affiliation": []
    },
    {
      "given": "Yadong",
      "family": "Cao",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Olasupo B.",
      "family": "Johnson",
      "sequence": "additional",
      "affiliation": []
    },
    {
      "given": "Zhenan",
      "family": "Bao",
      "sequence": "additional",
      "affiliation": []
    }
  ],
  "member": "311",
  "published-online": {
    "date-parts": [
      [
        2011,
        10,
        21
      ]
    ]
  },
  "reference": [
    {
      "key": "e_1_2_7_1_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.1579554"
    },
    {
      "key": "e_1_2_7_2_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.2186384"
    },
    {
      "key": "e_1_2_7_3_2",
      "first-page": "0935111",
      "volume": "88",
      "author": "Koster L. J. A.",
      "year": "2006",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "e_1_2_7_4_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/nature01949"
    },
    {
      "key": "e_1_2_7_5_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1126/science.1179963"
    },
    {
      "key": "e_1_2_7_6_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.1360785"
    },
    {
      "key": "e_1_2_7_7_2",
      "first-page": "381",
      "author": "Torsi L.",
      "year": "2005",
      "journal-title": "Anal. Chem."
    },
    {
      "key": "e_1_2_7_8_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/j.orgel.2008.12.001"
    },
    {
      "key": "e_1_2_7_9_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1073/pnas.0802105105"
    },
    {
      "key": "e_1_2_7_10_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/j.snb.2009.09.004"
    },
    {
      "key": "e_1_2_7_11_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1002/adma.200902760"
    },
    {
      "key": "e_1_2_7_12_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1007/s00216-005-3390-2"
    },
    {
      "key": "e_1_2_7_13_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1201/9781420008012"
    },
    {
      "key": "e_1_2_7_14_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/nature05427"
    },
    {
      "key": "e_1_2_7_15_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1002/adma.200600634"
    },
    {
      "key": "e_1_2_7_16_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1126/science.291.5508.1502"
    },
    {
      "key": "e_1_2_7_17_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1073/pnas.0708340105"
    },
    {
      "key": "e_1_2_7_18_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/cm049781j"
    },
    {
      "key": "e_1_2_7_19_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/cr000013v"
    },
    {
      "key": "e_1_2_7_20_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/cr050156n"
    },
    {
      "key": "e_1_2_7_21_2",
      "first-page": "0433121",
      "volume": "94",
      "author": "Zhang X.\u2010H.",
      "year": "2009",
      "journal-title": "App. Phys. Lett."
    },
    {
      "key": "e_1_2_7_22_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/S1369-7021(06)71447-X"
    },
    {
      "key": "e_1_2_7_23_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.123478"
    },
    {
      "key": "e_1_2_7_24_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.2115075"
    },
    {
      "key": "e_1_2_7_25_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.1868868"
    },
    {
      "key": "e_1_2_7_26_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/j.jnoncrysol.2005.11.122"
    },
    {
      "key": "e_1_2_7_27_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1143/JJAP.44.2841"
    },
    {
      "key": "e_1_2_7_28_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.2948862"
    },
    {
      "key": "e_1_2_7_29_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.3216587"
    },
    {
      "key": "e_1_2_7_30_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/cm020866z"
    },
    {
      "key": "e_1_2_7_31_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1002/adma.200902322"
    },
    {
      "key": "e_1_2_7_32_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1002/adma.200500517"
    },
    {
      "key": "e_1_2_7_33_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/cm049598q"
    },
    {
      "key": "e_1_2_7_34_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.1565683"
    },
    {
      "key": "e_1_2_7_35_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/j.tsf.2009.08.047"
    },
    {
      "key": "e_1_2_7_36_2",
      "unstructured": "For each measurement between 120\u2013300 VGSdata points were collected. The slope of theIDS1/2line was taken over the a 20 point average around maximum derivative point to establish a consistant average maximum mobility which would be independent of the shifting threshold voltage."
    },
    {
      "key": "e_1_2_7_37_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/cm0710599"
    },
    {
      "key": "e_1_2_7_38_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1002/adma.200803328"
    },
    {
      "key": "e_1_2_7_39_2",
      "unstructured": "The strain (S) can be approximated by the equationS=ds/2R wheredsis the thickness of the substrate (120 \u03bcm) andRis the bending radius."
    },
    {
      "key": "e_1_2_7_40_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1063/1.1826239"
    },
    {
      "key": "e_1_2_7_41_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/nmat1105"
    },
    {
      "key": "e_1_2_7_42_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1039/b921767c"
    },
    {
      "key": "e_1_2_7_43_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1002/adfm.200390030"
    },
    {
      "key": "e_1_2_7_44_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/nmat2059"
    },
    {
      "key": "e_1_2_7_45_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1002/adma.201004187"
    },
    {
      "key": "e_1_2_7_46_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1007/3-540-06054-5_10"
    },
    {
      "key": "e_1_2_7_47_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1080/01411598908206863"
    },
    {
      "key": "e_1_2_7_48_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1038/nmat1329"
    },
    {
      "key": "e_1_2_7_49_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/ma970869a"
    },
    {
      "key": "e_1_2_7_50_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1021/cm900637p"
    },
    {
      "key": "e_1_2_7_51_2",
      "unstructured": "A previous report on the effects of strain on liquid crystalline OFET performance has demonstrated the use of an OTS\u2010functionalization PVA dielectric; however in the report the effects of stress on the OTS\u2010modified devices were not discussed. See the following reference."
    },
    {
      "key": "e_1_2_7_52_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1016/j.orgel.2009.11.014"
    },
    {
      "key": "e_1_2_7_53_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1073/pnas.0701472104"
    },
    {
      "key": "e_1_2_7_54_2",
      "doi-asserted-by": "publisher",
      "DOI": "10.1126/science.1146458"
    }
  ],
  "container-title": "Advanced Functional Materials",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fadfm.201101418",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "text-mining"
    },
    {
      "URL": "https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.201101418",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        10,
        11
      ]
    ],
    "date-time": "2023-10-11T22:45:25Z",
    "timestamp": 1697064325000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://onlinelibrary.wiley.com/doi/10.1002/adfm.201101418"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2011,
        10,
        21
      ]
    ]
  },
  "references-count": 54,
  "journal-issue": {
    "issue": "1",
    "published-print": {
      "date-parts": [
        [
          2012,
          1,
          11
        ]
      ]
    }
  },
  "alternative-id": [
    "10.1002/adfm.201101418"
  ],
  "URL": "http://dx.doi.org/10.1002/adfm.201101418",
  "relation": {},
  "ISSN": [
    "1616-301X",
    "1616-3028"
  ],
  "subject": [],
  "container-title-short": "Adv Funct Materials",
  "published": {
    "date-parts": [
      [
        2011,
        10,
        21
      ]
    ]
  }
}