DOI: 10.1002/adfm.201001521. Photoinduced Electron Transfer in Dye‐Sensitized SnO<sub>2</sub> Nanowire Field‐Effect Transistors

Photoinduced Electron Transfer in Dye‐Sensitized SnO2 Nanowire Field‐Effect Transistors

10.1002/adfm.201001521

Crossref journal-article

Wiley

Advanced Functional Materials (311)

Abstract

AbstractElectron transfer from excited dye molecules (chlorophyll or fluorescein) to a semiconductor is demonstrated by photoaction and photoluminescence spectra on field‐effect transistors consisting of dye‐sensitized individual SnO2 nanowires. The photoaction spectrum shows a much better resolution for nanowires non‐covalently functionalized with dye molecules than for dyes deposited on SnO2 nanoparticle‐films. Possible reasons for the deviation between the photoaction spectra and ordinary optical absorption spectra as well as for the current‐tail appearing along the falling edge are addressed. In dye‐sensitized nanowires, electron transfer from photo‐excited dyes to nanowires is analyzed by comparing gate‐voltage dependences in photoaction and photoluminescence spectra. The importance of this study is in the understanding of electron injection and recombination provided, as well as the performance optimization of nanowire‐based dye‐sensitized solar cells.

Bibliography

Wu, H., Huang, Y., Ding, I., Chen, C., Yang, Y., Tsai, C., Chen, C., & Chen, Y. (2010). Photoinduced Electron Transfer in DyeâSensitized SnO2 Nanowire FieldâEffect Transistors. Advanced Functional Materials, 21(3), 474â479. Portico.

Authors 8

Hsing‐Chen Wu (first)
Yuan‐Chang Huang (additional)
I‐Kang Ding (additional)
Chun‐Cing Chen (additional)
Yi‐Han Yang (additional)
Chia‐Chang Tsai (additional)
Chii‐Dong Chen (additional)
Yit‐Tsong Chen (additional)

References 37 Referenced 23

10.1002/1521-3773(20020703)41:13<2405::AID-ANIE2405>3.0.CO;2-3
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The Bohr radius of the electron‐hole pairs in SnO2is about 2.4 nm (Ref. 24) which is much smaller than the diameter (≈30 nm) of the SnO2‐NW studied in this work. The density of states (DOS) in the quasi‐one dimensional SnO2‐NW belongs essentially to a three‐dimensional system where the DOS is of the square‐root of energy (E1/2) dependency.
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Dates

Type	When
Created	14 years, 9 months ago (Nov. 22, 2010, 7:51 a.m.)
Deposited	2 years ago (Aug. 19, 2023, 4:54 p.m.)
Indexed	1 year, 10 months ago (Oct. 11, 2023, 3:09 p.m.)
Issued	14 years, 9 months ago (Nov. 22, 2010)
Published	14 years, 9 months ago (Nov. 22, 2010)
Published Online	14 years, 9 months ago (Nov. 22, 2010)
Published Print	14 years, 6 months ago (Feb. 8, 2011)

Funders 0

None

BibTeX

@article{Wu_2010, title={Photoinduced Electron Transfer in Dye‐Sensitized SnO2 Nanowire Field‐Effect Transistors}, volume={21}, ISSN={1616-3028}, url={http://dx.doi.org/10.1002/adfm.201001521}, DOI={10.1002/adfm.201001521}, number={3}, journal={Advanced Functional Materials}, publisher={Wiley}, author={Wu, Hsing‐Chen and Huang, Yuan‐Chang and Ding, I‐Kang and Chen, Chun‐Cing and Yang, Yi‐Han and Tsai, Chia‐Chang and Chen, Chii‐Dong and Chen, Yit‐Tsong}, year={2010}, month=nov, pages={474–479} }

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