Abstract
AbstractPhotodetectors are fabricated from individual single‐crystal CdSe nanoribbons, and the photoresponse properties of the devices are studied systematically. The photodetector shows a high sensitivity towards excitation wavelength with a sharp cut‐off at 710 nm, corresponding to the bandgap of CdSe. The device exhibits a high photo‐to‐dark current ratio of five orders of magnitude at 650 nm, and can function with excellent stability, reproducibility, and high response speed (< 1 ms) in a wide range of switching frequency (up to 300 Hz). The photocurrent of the device shows a power‐law dependence on light intensity. This finding together with the analysis of the light intensity‐dependent response speed reveals the existence of various traps at different energy levels (shallow and deep) in the bandgap. Coating with a thin SiO2 isolating layer increases the photocurrent but decreases the response speed of the CdSe nanoribbon, which is attributed to reduction of recombination centers on ribbon surface.
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Dates
Type | When |
---|---|
Created | 18 years, 1 month ago (June 29, 2007, 4:48 a.m.) |
Deposited | 1 year, 9 months ago (Nov. 14, 2023, 6:02 p.m.) |
Indexed | 2 weeks, 3 days ago (Aug. 5, 2025, 8:11 a.m.) |
Issued | 18 years, 1 month ago (June 29, 2007) |
Published | 18 years, 1 month ago (June 29, 2007) |
Published Online | 18 years, 1 month ago (June 29, 2007) |
Published Print | 18 years ago (July 23, 2007) |
@article{Jiang_2007, title={Photoresponse Properties of CdSe Single‐Nanoribbon Photodetectors}, volume={17}, ISSN={1616-3028}, url={http://dx.doi.org/10.1002/adfm.200600351}, DOI={10.1002/adfm.200600351}, number={11}, journal={Advanced Functional Materials}, publisher={Wiley}, author={Jiang, Y. and Zhang, W. J. and Jie, J. S. and Meng, X. M. and Fan, X. and Lee, S.‐T.}, year={2007}, month=jun, pages={1795–1800} }