DOI: 10.1002/adfm.200500807. Defects in GaN Nanowires

10.1002/adfm.200500807

Crossref journal-article

Wiley

Advanced Functional Materials (311)

Abstract

AbstractHigh‐resolution transmission electron microscopy (HRTEM) and cross‐sectional transmission electron microscopy (XTEM) are used to characterize common defects in wurtzite GaN nanowires grown via a vapor–liquid–solid (VLS) mechanism. HRTEM shows that these nanowires contain numerous (001) stacking defects interspersed with small cubic GaN regions. Using XTEM, bicrystalline nanowires are discovered with twofold rotational twin axes along their growth directions, and are found to grow along high‐index directions or vicinal to low‐index planes. We propose a defect‐mediated VLS growth model to qualitatively account for the prevalence of these extended defects, and discuss the implications of these defects for nanowire growth kinetics and device behavior.

Bibliography

Tham, D., Nam, C. âY., & Fischer, J. E. (2006). Defects in GaN Nanowires. Advanced Functional Materials, 16(9), 1197â1202. Portico.

Authors 3

D. Tham (first)
C.‐Y. Nam (additional)
J. E. Fischer (additional)

References 24 Referenced 90

Dates

Type	When
Created	19 years, 3 months ago (May 4, 2006, 5:26 a.m.)
Deposited	1 year, 9 months ago (Nov. 15, 2023, 10:18 a.m.)
Indexed	1 month, 4 weeks ago (July 4, 2025, 8:06 a.m.)
Issued	19 years, 3 months ago (May 4, 2006)
Published	19 years, 3 months ago (May 4, 2006)
Published Online	19 years, 3 months ago (May 4, 2006)
Published Print	19 years, 2 months ago (June 6, 2006)

Funders 0

None

BibTeX

@article{Tham_2006, title={Defects in GaN Nanowires}, volume={16}, ISSN={1616-3028}, url={http://dx.doi.org/10.1002/adfm.200500807}, DOI={10.1002/adfm.200500807}, number={9}, journal={Advanced Functional Materials}, publisher={Wiley}, author={Tham, D. and Nam, C.‐Y. and Fischer, J. E.}, year={2006}, month=may, pages={1197–1202} }

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