Crossref journal-article
Wiley
Advanced Functional Materials (311)
Abstract

AbstractRecently, films created by incorporating metallic nanoparticles into organic or polymeric materials have demonstrated electrical bistability, as well as the memory effect, when subjected to an electrical bias. Organic and polymeric digital memory devices based on this bistable electronic behavior have emerged as a viable technology in the field of organic electronics. These devices exhibit fast response speeds and can form multiple‐layer stacking structures, demonstrating that organic memory devices possess a high potential to become flexible, ultrafast, and ultrahigh‐density memory devices. This behavior is believed to be related to charge storage in the organic or polymer film, where devices are able to exhibit two different states of conductivity often separated by several orders of magnitude. By defining the two states as “1” and “0”, it is now possible to create digital memory devices with this technology. This article reviews electrically bistable devices developed in our laboratory. Our research has stimulated strong interest in this area worldwide. The research by other laboratories is reviewed as well.

Bibliography

Yang, Y., Ouyang, J., Ma, L., Tseng, R. J. ‐H., & Chu, C. ‐W. (2006). Electrical Switching and Bistability in Organic/Polymeric Thin Films and Memory Devices. Advanced Functional Materials, 16(8), 1001–1014. Portico.

Authors 5
  1. Y. Yang (first)
  2. J. Ouyang (additional)
  3. L. Ma (additional)
  4. R. J.‐H. Tseng (additional)
  5. C.‐W. Chu (additional)
References 98 Referenced 545
  1. 10.1038/16393
  2. 10.1038/scientificamerican0204-76
  3. 10.1126/science.280.5370.1741
  4. 10.1147/rd.451.0011
  5. 10.1126/science.270.5243.1789
  6. 10.1002/1616-3028(200102)11:1<15::AID-ADFM15>3.0.CO;2-A
  7. 10.1143/JJAP.42.404
  8. 10.1149/1.2425380
  9. 10.1063/1.1659895
  10. 10.1016/S0022-3093(01)01068-7
  11. M. N.Kozicki W. C.West US Patent 5 761 115 1998. (10.1016/S0958-2118(98)90297-X)
  12. 10.1126/science.289.5476.94
  13. 10.1063/1.1849848
  14. 10.1038/nature03190
  15. 10.1063/1.125787
  16. 10.1109/TED.2002.801296
  17. {'key': 'e_1_2_1_18_2', 'first-page': '541', 'author': 'Guarini K. W.', 'year': '2003', 'journal-title': 'IEEE Int. Electron Device Meet., Tech. Dig.'} / IEEE Int. Electron Device Meet., Tech. Dig. by Guarini K. W. (2003)
  18. 10.1063/1.1385190
  19. 10.1126/science.1095520
  20. 10.1016/S1369-7021(02)05227-6
  21. 10.1038/nmat1309
  22. 10.1088/0957-4484/14/4/311
  23. 10.1021/ja037025t
  24. 10.1021/jp0134695
  25. 10.1002/adma.200401148
  26. 10.1063/1.1436274
  27. 10.1002/adma.200306187
  28. 10.1063/1.1604962
  29. L. P. Ma J. Liu Y. Yang US patent application US 01/17 206 2001.
  30. 10.1063/1.1473234
  31. 10.1063/1.1556555
  32. 10.1557/mrs2004.237
  33. 10.1080/713738589
  34. 10.1103/PhysRevB.13.641
  35. 10.1103/PhysRevB.54.16523
  36. {'key': 'e_1_2_1_37_2', 'first-page': '11531', 'volume': '69', 'author': 'Wu J. H.', 'year': '2004', 'journal-title': 'Phys. Rev. B'} / Phys. Rev. B by Wu J. H. (2004)
  37. 10.1063/1.1866496
  38. 10.1038/nmat1269
  39. 10.1109/JPROC.2005.851235
  40. 10.1021/la970588w
  41. 10.1103/PhysRevB.68.035416
  42. 10.1063/1.1559439
  43. 10.1063/1.1597966
  44. 10.1006/spmi.2000.0827
  45. 10.1080/00207219208925733
  46. 10.1002/pssa.2211080102
  47. 10.1063/1.1653751
  48. 10.1039/j19670000469
  49. 10.1039/j19710000550
  50. 10.1021/jp0268462
  51. 10.1021/jp0134695
  52. 10.1016/S0040-6090(03)00593-5
  53. 10.1016/S0001-8686(97)90017-8
  54. 10.1007/BF00348162
  55. 10.1126/science.280.5372.2098
  56. 10.1021/ac990432w
  57. Gaussian 03 Revision B.05 Gaussian Inc. Pittsburgh PA2003.
  58. 10.1143/JPSJ.17.975
  59. 10.1021/jp982822c
  60. 10.1063/1.1887819
  61. 10.1016/S1566-1199(01)00009-X
  62. 10.1002/polb.10654
  63. 10.1002/adma.200500225
  64. E. H. Rhoderick R. H. Williams Metal‐Semiconductor Contacts Clarendon Press Oxford1988.
  65. 10.1063/1.341433
  66. 10.1016/0040-6090(75)90136-4
  67. 10.1002/(SICI)1099-0690(199905)1999:5<1239::AID-EJOC1239>3.0.CO;2-R
  68. 10.1002/1616-3028(200102)11:1<15::AID-ADFM15>3.0.CO;2-A
  69. 10.1002/(SICI)1521-4095(199901)11:1<11::AID-ADMA11>3.0.CO;2-3
  70. 10.1021/ja00784a066
  71. 10.1021/jp048890i
  72. 10.1021/nl050587l
  73. 10.1021/ja028371y
  74. 10.1021/ja0371754
  75. 10.1021/nl035122e
  76. 10.1002/chem.200305211
  77. 10.1006/jcis.2001.7576
  78. 10.1149/1.1589762
  79. 10.1063/1.1643547
  80. {'key': 'e_1_2_1_81_2', 'first-page': '211', 'volume': '90', 'author': 'Beinhoff M.', 'year': '2004', 'journal-title': 'Polym. Mater. Sci. Eng.'} / Polym. Mater. Sci. Eng. by Beinhoff M. (2004)
  81. 10.1063/1.1636520
  82. 10.1016/S1386-9477(02)00577-5
  83. 10.1063/1.1829166
  84. 10.1016/j.orgel.2004.03.002
  85. 10.1063/1.1600848
  86. 10.1063/1.1778211
  87. 10.1063/1.1992653
  88. 10.1063/1.1445281
  89. 10.1016/S0379-6779(03)00377-1
  90. 10.1002/adma.200401048
  91. 10.1021/ma049572k
  92. 10.1002/adma.200500232
  93. 10.1063/1.1819991
  94. 10.1103/PhysRevLett.92.178302
  95. 10.1063/1.1763222
  96. 10.1002/adma.200401534
  97. 10.1021/jp027369q
  98. 10.1021/jp0452507
Dates
Type When
Created 19 years, 5 months ago (March 14, 2006, 12:19 p.m.)
Deposited 1 year, 10 months ago (Oct. 18, 2023, 5:31 p.m.)
Indexed 1 day, 7 hours ago (Sept. 4, 2025, 10:11 a.m.)
Issued 19 years, 5 months ago (March 14, 2006)
Published 19 years, 5 months ago (March 14, 2006)
Published Online 19 years, 5 months ago (March 14, 2006)
Published Print 19 years, 3 months ago (May 19, 2006)
Funders 0

None

@article{Yang_2006, title={Electrical Switching and Bistability in Organic/Polymeric Thin Films and Memory Devices}, volume={16}, ISSN={1616-3028}, url={http://dx.doi.org/10.1002/adfm.200500429}, DOI={10.1002/adfm.200500429}, number={8}, journal={Advanced Functional Materials}, publisher={Wiley}, author={Yang, Y. and Ouyang, J. and Ma, L. and Tseng, R. J.‐H. and Chu, C.‐W.}, year={2006}, month=mar, pages={1001–1014} }