Abstract
AbstractNon‐volatile solid‐state memory cells based on composites of metal nanoparticles and polymers are embedded in organic semiconducting host materials. This paper presents data from a wide range of materials and device structures and shows that the switching phenomenon is commonly observed.
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Dates
Type | When |
---|---|
Created | 19 years, 9 months ago (Nov. 16, 2005, 12:48 p.m.) |
Deposited | 1 year, 10 months ago (Oct. 12, 2023, 11:29 p.m.) |
Indexed | 6 days, 20 hours ago (Aug. 30, 2025, 12:51 p.m.) |
Issued | 19 years, 9 months ago (Nov. 24, 2005) |
Published | 19 years, 9 months ago (Nov. 24, 2005) |
Published Online | 19 years, 9 months ago (Nov. 24, 2005) |
Published Print | 19 years, 9 months ago (Dec. 1, 2005) |
@article{Bozano_2005, title={Organic Materials and Thin‐Film Structures for Cross‐Point Memory Cells Based on Trapping in Metallic Nanoparticles}, volume={15}, ISSN={1616-3028}, url={http://dx.doi.org/10.1002/adfm.200500130}, DOI={10.1002/adfm.200500130}, number={12}, journal={Advanced Functional Materials}, publisher={Wiley}, author={Bozano, L. D. and Kean, B. W. and Beinhoff, M. and Carter, K. R. and Rice, P. M. and Scott, J. C.}, year={2005}, month=nov, pages={1933–1939} }