DOI: 10.1002/adfm.200390030. Low‐<i>k</i> Insulators as the Choice of Dielectrics in Organic Field‐Effect Transistors

Low‐k Insulators as the Choice of Dielectrics in Organic Field‐Effect Transistors

10.1002/adfm.200390030

Crossref journal-article

Wiley

Advanced Functional Materials (311)

Abstract

AbstractIn this paper, we present a new effect influencing the operation of organic field‐effect transistors resulting from the choice of gate insulator material. In a series of studies it was found that the interaction between the insulator and the semiconductor materials plays an important role in carrier transport. The insulator is not only capable of affecting the morphology of the semiconductor layer, but can also change the density of states by local polarization effects. Carrier localization is enhanced by insulators with large permittivities, due to the random dipole field present at the interface. We have investigated this effect on a number of disordered organic semiconductor materials, and show here that significant benefits are achievable by the use of low‐k dielectrics as opposed to the existing trend of increasing the permittivity for low operational voltage. We also discuss fundamental differences in the case of field‐effect transistors with band‐like semiconductors.

Bibliography

Veres, J., Ogier, S. D., Leeming, S. W., Cupertino, D. C., & Mohialdin Khaffaf, S. (2003). Lowâk Insulators as the Choice of Dielectrics in Organic FieldâEffect Transistors. Advanced Functional Materials, 13(3), 199â204. Portico.

Authors 5

J. Veres (first)
S.D. Ogier (additional)
S.W. Leeming (additional)
D.C. Cupertino (additional)
S. Mohialdin Khaffaf (additional)

References 27 Referenced 728

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{'key': 'e_1_2_1_5_2', 'first-page': '708', 'author': 'Veres J.', 'year': '2002', 'journal-title': 'Mater. Res. Soc. Symp. Proc.'} / Mater. Res. Soc. Symp. Proc. by Veres J. (2002)
10.1126/science.280.5370.1741
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10.1109/2944.669475
{'key': 'e_1_2_1_10_2', 'first-page': '665', 'author': 'Kosbar L.L.', 'year': '2001', 'journal-title': 'Mater. Res. Soc. Symp. Proc.'} / Mater. Res. Soc. Symp. Proc. by Kosbar L.L. (2001)
{'key': 'e_1_2_1_11_2', 'first-page': 'BB8.10', 'author': 'Knipp D.', 'year': '2002', 'journal-title': 'Mater. Res. Soc. Symp. Proc.'} / Mater. Res. Soc. Symp. Proc. by Knipp D. (2002)
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J. A. V. Allen B. A. Brown S. W. Leeming J. D. Morgan J. Veres WO Patent 00/78843 A12000.
M. Inbasekaran W. Weishi E. P. Woo US Patent 5 777 070 1998. (10.1016/S0958-2118(98)90297-X)

Dates

Type	When
Created	22 years, 5 months ago (March 18, 2003, 8:27 p.m.)
Deposited	1 year, 9 months ago (Nov. 16, 2023, 1:37 p.m.)
Indexed	5 days, 8 hours ago (Aug. 20, 2025, 8:32 a.m.)
Issued	22 years, 5 months ago (March 4, 2003)
Published	22 years, 5 months ago (March 4, 2003)
Published Online	22 years, 5 months ago (March 7, 2003)
Published Print	22 years, 5 months ago (March 4, 2003)

Funders 0

None

BibTeX

@article{Veres_2003, title={Low‐k Insulators as the Choice of Dielectrics in Organic Field‐Effect Transistors}, volume={13}, ISSN={1616-3028}, url={http://dx.doi.org/10.1002/adfm.200390030}, DOI={10.1002/adfm.200390030}, number={3}, journal={Advanced Functional Materials}, publisher={Wiley}, author={Veres, J. and Ogier, S.D. and Leeming, S.W. and Cupertino, D.C. and Mohialdin Khaffaf, S.}, year={2003}, month=mar, pages={199–204} }

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